Transistor count
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The transistor count is the number of transistors in an electronic device (typically on a single substrate or silicon die). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a die, transistor count does not represent how advanced the corresponding manufacturing technology is. A better indication of this is transistor density which is the ratio of a device's transistor count to its die area.
Records
As of 2023[update], the highest transistor count in flash memory is Micron's 2terabyte (3D-stacked) 16-die, 232-layer V-NAND flash memory chip, with 5.3trillion floating-gate MOSFETs (3bits per transistor).
The highest transistor count in a single chip processor as of 2020[update] is that of the deep learning processor Wafer Scale Engine 2 by Cerebras. It has 2.6trillion MOSFETs in 84 exposed fields (dies) on a wafer, manufactured using TSMC's 7 nm FinFET process.
As of 2026[update], the GPU with the highest transistor count is Nvidia's Rubin accelerator, built on TSMC's custom N3P process node and totaling 336 billion MOSFETs.
The highest transistor count in a consumer microprocessor as of March2025[update] is 184billion transistors, in Apple's ARM-based dual-die M3 Ultra SoC, which is fabricated using TSMC's 3 nm semiconductor manufacturing process.[citation needed]
| Year | Component | Name | Numberof MOSFETs (billion) | Remarks |
|---|---|---|---|---|
| 2022 | Flash memory | Micron's V-NAND module | 5300 | stacked package of sixteen 232-layer 3D NAND dies |
| 2020 | any processor | Wafer Scale Engine 2 | 2600 | wafer-scale design of 84 exposed fields (dies) |
| 2026 | GPU | Nvidia Rubin | 0336 | Uses two reticle limit dies and two I/O dies, joined and acting as a single large monolithic piece of silicon |
| 2025 | Microprocessor (consumer) | Apple M3 Ultra | 0184 | SoC using two dies joined with a high-speed bridge |
In terms of computer systems that consist of numerous integrated circuits, the supercomputer with the highest transistor count as of 2016[update] was the Chinese-designed Sunway TaihuLight, which has for all CPUs/nodes combined "about 400 trillion transistors in the processing part of the hardware" and "the DRAM includes about 12 quadrillion transistors, and that's about 97 percent of all the transistors." To compare, the smallest computer, as of 2018[update] dwarfed by a grain of rice, had on the order of 100,000 transistors. Early experimental solid-state computers had as few as 130 transistors but used large amounts of diode logic. The first carbon nanotube computer had 178 transistors and was a 1-bit one-instruction set computer, while a later one is 16-bit (its instruction set is 32-bit RISC-V though).
Ionic transistor chips ("water-based" analog limited processor), have up to hundreds of such transistors.
Estimates of the total numbers of transistors manufactured:
- Up to 2014: 2.9×1021
- Up to 2018: 1.3×1022
Transistor count

Microprocessors
A microprocessor incorporates the functions of a computer's central processing unit on a single integrated circuit. It is a multi-purpose, programmable device that accepts digital data as input, processes it according to instructions stored in its memory, and provides results as output.
The development of MOS integrated circuit technology in the 1960s led to the development of the first microprocessors. The 20-bit MP944, developed by Garrett AiResearch for the U.S. Navy's F-14 Tomcat fighter in 1970, is considered by its designer Ray Holt to be the first microprocessor. It was a multi-chip microprocessor, fabricated on six MOS chips. However, it was classified by the Navy until 1998. The 4-bit Intel 4004, released in 1971, was the first single-chip microprocessor.
Modern microprocessors typically include on-chip cache memories. The number of transistors used for these cache memories typically far exceeds the number of transistors used to implement the logic of the microprocessor (that is, excluding the cache). For example, the last DEC Alpha chip uses 90% of its transistors for cache.
| Processor | Transistor count | Year | Designer | Process (nm) | Area (mm2) | Transistor density (tr./mm2) |
|---|---|---|---|---|---|---|
| MP944 (20-bit, 6-chip, 28 chips total) | 74,442 (5,360 excl. ROM & RAM) | 1970 | Garrett AiResearch | ? | ? | ? |
| Intel 4004 (4-bit, 16-pin) | 2,250 | 1971 | Intel | 10,000nm | 12mm2 | 188 |
| TMX 1795 (8-bit, 24-pin) | 3,078 | 1971 | Texas Instruments | ? | 30.64mm2 | 100.5 |
| Intel 8008 (8-bit, 18-pin) | 3,500 | 1972 | Intel | 10,000nm | 14mm2 | 250 |
| NEC μCOM-4 (4-bit, 42-pin) | 2,500 | 1973 | NEC | 7,500nm | ? | ? |
| Toshiba TLCS-12 (12-bit) | 11,000+ | 1973 | Toshiba | 6,000nm | 32.45mm2 | 340+ |
| Intel 4040 (4-bit, 16-pin) | 3,000 | 1974 | Intel | 10,000nm | 12mm2 | 250 |
| Motorola 6800 (8-bit, 40-pin) | 4,100 | 1974 | Motorola | 6,000nm | 16mm2 | 256 |
| Intel 8080 (8-bit, 40-pin) | 6,000 | 1974 | Intel | 6,000nm | 20mm2 | 300 |
| TMS 1000 (4-bit, 28-pin) | 8,000 | 1974 | Texas Instruments | 8,000nm | 11mm2 | 730 |
| HP Nanoprocessor (8-bit, 40-pin) | 4,639 | 1974 | Hewlett-Packard | ? | 19mm2 | ? |
| MOS Technology 6502 (8-bit, 40-pin) | 4,528 | 1975 | MOS Technology | 8,000nm | 21mm2 | 216 |
| Intersil IM6100 (12-bit, 40-pin; clone of PDP-8) | 4,000 | 1975 | Intersil | ? | ? | ? |
| CDP 1801 (8-bit, 2-chip, 40-pin) | 5,000 | 1975 | RCA | ? | ? | ? |
| RCA 1802 (8-bit, 40-pin) | 5,000 | 1976 | RCA | 5,000nm | 27mm2 | 185 |
| Zilog Z80 (8-bit, 4-bit ALU, 40-pin) | 8,500 | 1976 | Zilog | 4,000nm | 18mm2 | 470 |
| Intel 8085 (8-bit, 40-pin) | 6,500 | 1976 | Intel | 3,000nm | 20mm2 | 325 |
| TMS9900 (16-bit) | 8,000 | 1976 | Texas Instruments | 6,000nm | ? | ? |
| Bellmac-8 (8-bit) | 7,000 | 1977 | Bell Labs | 5,000nm | ? | ? |
| Motorola 6809 (8-bit with some 16-bit features, 40-pin) | 9,000 | 1978 | Motorola | 5,000nm | 21mm2 | 430 |
| Intel 8086 (16-bit, 40-pin) | 29,000 | 1978 | Intel | 3,000nm | 33mm2 | 880 |
| Zilog Z8000 (16-bit) | 17,500 | 1979 | Zilog | 5,000-6,000nm (design rules) | 39.31mm2 (238x256 mil2) | 445 |
| Intel 8088 (16-bit, 8-bit data bus) | 29,000 | 1979 | Intel | 3,000nm | 33mm2 | 880 |
| Motorola 68000 (16/32-bit, 32-bit registers, 16-bit ALU) | 68,000 | 1979 | Motorola | 3,500nm | 44mm2 | 1,550 |
| Intel 8051 (8-bit, 40-pin) | 50,000 | 1980 | Intel | ? | ? | ? |
| WDC 65C02 | 11,500 | 1981 | WDC | 3,000nm | 6mm2 | 1,920 |
| ROMP (32-bit) | 45,000 | 1981 | IBM | 2,000nm | 58.52mm2 | 770 |
| Intel 80186 (16-bit, 68-pin) | 55,000 | 1982 | Intel | 3,000nm | 60mm2 | 920 |
| Intel 80286 (16-bit, 68-pin) | 134,000 | 1982 | Intel | 1,500nm | 49mm2 | 2,730 |
| WDC 65C816 (8/16-bit) | 22,000 | 1983 | WDC | 3,000nm | 9mm2 | 2,400 |
| NEC V20 | 63,000 | 1984 | NEC | ? | ? | ? |
| Motorola 68020 (32-bit; 114 pins used) | 190,000 | 1984 | Motorola | 2,000nm | 85mm2 | 2,200 |
| Intel 80386 (32-bit, 132-pin; no cache) | 275,000 | 1985 | Intel | 1,500nm | 104mm2 | 2,640 |
| ARM 1 (32-bit; no cache) | 25,000 | 1985 | Acorn | 3,000nm | 50mm2 | 500 |
| Novix NC4016 (16-bit) | 16,000 | 1985 | Harris Corporation | 3,000nm | ? | ? |
| SPARC MB86900 (32-bit; no cache) | 110,000 | 1986 | Fujitsu | 1,200nm | ? | ? |
| NEC V60 (32-bit; no cache) | 375,000 | 1986 | NEC | 1,500nm | ? | ? |
| ARM 2 (32-bit, 84-pin; no cache) | 27,000 | 1986 | Acorn | 2,000nm | 30.25mm2 | 890 |
| Z80000 (32-bit; very small cache) | 91,000 | 1986 | Zilog | ? | ? | ? |
| NEC V70 (32-bit; no cache) | 385,000 | 1987 | NEC | 1,500nm | ? | ? |
| Hitachi Gmicro/200 | 730,000 | 1987 | Hitachi | 1,000nm | ? | ? |
| Motorola 68030 (32-bit, very small caches) | 273,000 | 1987 | Motorola | 800nm | 102mm2 | 2,680 |
| TI Explorer's 32-bit Lisp machine chip | 553,000 | 1987 | Texas Instruments | 2,000nm | ? | ? |
| DEC WRL MultiTitan | 180,000 | 1988 | DEC WRL | 1,500nm | 61mm2 | 2,950 |
| Intel i960 (32-bit, 33-bit memory subsystem, no cache) | 250,000 | 1988 | Intel | 1,500nm | ? | ? |
| Intel i960CA (32-bit, cache) | 600,000 | 1989 | Intel | 800nm | 143mm2 | 4,200 |
| Intel i860 (32/64-bit, 128-bit SIMD, cache, VLIW) | 1,000,000 | 1989 | Intel | ? | ? | ? |
| Intel 80486 (32-bit, 8KB cache) | 1,180,235 | 1989 | Intel | 1,000nm | 173mm2 | 6,822 |
| ARM 3 (32-bit, 4KB cache) | 310,000 | 1989 | Acorn | 1,500nm | 87mm2 | 3,600 |
| POWER1 (9-chip module, 72 kB of cache) | 6,900,000 | 1990 | IBM | 1,000nm | 1,283.61mm2 | 5,375 |
| Motorola 68040 (32-bit, 8KB caches) | 1,200,000 | 1990 | Motorola | 650nm | 152mm2 | 7,900 |
| R4000 (64-bit, 16KB of caches) | 1,350,000 | 1991 | MIPS | 1,000nm | 213mm2 | 6,340 |
| ARM 6 (32-bit, no cache for this 60 variant) | 35,000 | 1991 | ARM | 800nm | ? | ? |
| Hitachi SH-1 (32-bit, no cache) | 600,000 | 1992 | Hitachi | 800nm | 100mm2 | 6,000 |
| Intel i960CF (32-bit, cache) | 900,000 | 1992 | Intel | ? | 125mm2 | 7,200 |
| Alpha 21064 (64-bit, 290-pin; 16KB of caches) | 1,680,000 | 1992 | DEC | 750nm | 233.52mm2 | 7,190 |
| Hitachi HARP-1 (32-bit, cache) | 2,800,000 | 1993 | Hitachi | 500nm | 267mm2 | 10,500 |
| Pentium (32-bit, 16KB of caches) | 3,100,000 | 1993 | Intel | 800nm | 294mm2 | 10,500 |
| POWER2 (8-chip module, 288 kB of cache) | 23,037,000 | 1993 | IBM | 720nm | 1,217.39mm2 | 18,923 |
| ARM700 (32-bit; 8KB cache) | 578,977 | 1994 | ARM | 700nm | 68.51mm2 | 8,451 |
| MuP21 (21-bit, 40-pin; includes video) | 7,000 | 1994 | Offete Enterprises | 1,200nm | ? | ? |
| Motorola 68060 (32-bit, 16KB of caches) | 2,500,000 | 1994 | Motorola | 600nm | 218mm2 | 11,500 |
| PowerPC 601 (32-bit, 32KB of caches) | 2,800,000 | 1994 | Apple, IBM, Motorola | 600nm | 121mm2 | 23,000 |
| PowerPC 603 (32-bit, 16KB of caches) | 1,600,000 | 1994 | Apple, IBM, Motorola | 500nm | 84.76mm2 | 18,900 |
| PowerPC 603e (32-bit, 32KB of caches) | 2,600,000 | 1995 | Apple, IBM, Motorola | 500nm | 98mm2 | 26,500 |
| Alpha 21164 EV5 (64-bit, 112 kB cache) | 9,300,000 | 1995 | DEC | 500nm | 298.65mm2 | 31,140 |
| SA-110 (32-bit, 32KB of caches) | 2,500,000 | 1995 | Acorn, DEC, Apple | 350nm | 50mm2 | 50,000 |
| Pentium Pro (32-bit, 16KB of caches; L2 cache on-package, but on separate die) | 5,500,000 | 1995 | Intel | 500nm | 307mm2 | 18,000 |
| PA-8000 64-bit, no cache | 3,800,000 | 1995 | HP | 500nm | 337.69mm2 | 11,300 |
| Alpha 21164A EV56 (64-bit, 112 kB cache) | 9,660,000 | 1996 | DEC | 350nm | 208.8mm2 | 46,260 |
| AMD K5 (32-bit, caches) | 4,300,000 | 1996 | AMD | 500nm | 251mm2 | 17,000 |
| Pentium II Klamath (32-bit, 64-bit SIMD, caches) | 7,500,000 | 1997 | Intel | 350nm | 195mm2 | 39,000 |
| AMD K6 (32-bit, caches) | 8,800,000 | 1997 | AMD | 350nm | 162mm2 | 54,000 |
| F21 (21-bit; includes e.g. video) | 15,000 | 1997 | Offete Enterprises | ? | ? | ? |
| AVR (8-bit, 40-pin; w/memory) | 140,000 (48,000 excl. memory) | 1997 | Nordic VLSI/Atmel | ? | ? | ? |
| Pentium II Deschutes (32-bit, large cache) | 7,500,000 | 1998 | Intel | 250nm | 113mm2 | 66,000 |
| Alpha 21264 EV6 (64-bit) | 15,200,000 | 1998 | DEC | 350nm | 313.96mm2 | 48,400 |
| Alpha 21164PC PCA57 (64-bit, 48 kB cache) | 5,700,000 | 1998 | Samsung | 280nm | 100.5mm2 | 56,700 |
| Hitachi SH-4 (32-bit, caches) | 3,200,000 | 1998 | Hitachi | 250nm | 57.76mm2 | 55,400 |
| ARM 9TDMI (32-bit, no cache) | 111,000 | 1999 | Acorn | 350nm | 4.8mm2 | 23,100 |
| Pentium III Katmai (32-bit, 128-bit SIMD, caches) | 9,500,000 | 1999 | Intel | 250nm | 128mm2 | 74,000 |
| Emotion Engine (64-bit, 128-bit SIMD, cache) | 10,500,000 – 13,500,000 | 1999 | Sony, Toshiba | 250nm | 239.7mm2 | 43,800 – 56,300 |
| Pentium II Mobile Dixon (32-bit, caches) | 27,400,000 | 1999 | Intel | 180nm | 180mm2 | 152,000 |
| AMD K6-III (32-bit, caches) | 21,300,000 | 1999 | AMD | 250nm | 118mm2 | 181,000 |
| AMD K7 (32-bit, caches) | 22,000,000 | 1999 | AMD | 250nm | 184mm2 | 120,000 |
| Gekko (32-bit, large cache) | 21,000,000 | 2000 | IBM, Nintendo | 180nm | 43mm2 | 490,000 (check) |
| Pentium III Coppermine (32-bit, large cache) | 21,000,000 | 2000 | Intel | 180nm | 80mm2 | 263,000 |
| Pentium 4 Willamette (32-bit, large cache) | 42,000,000 | 2000 | Intel | 180nm | 217mm2 | 194,000 |
| SPARC64 V (64-bit, large cache) | 191,000,000 | 2001 | Fujitsu | 130nm | 290mm2 | 659,000 |
| Pentium III Tualatin (32-bit, large cache) | 45,000,000 | 2001 | Intel | 130nm | 81mm2 | 556,000 |
| Pentium 4 Northwood (32-bit, large cache) | 55,000,000 | 2002 | Intel | 130nm | 145mm2 | 379,000 |
| Itanium 2 McKinley (64-bit, large cache) | 220,000,000 | 2002 | Intel | 180nm | 421mm2 | 523,000 |
| Alpha 21364 (64-bit, 946-pin, SIMD, very large caches) | 152,000,000 | 2003 | DEC | 180nm | 397mm2 | 383,000 |
| AMD K7 Barton (32-bit, large cache) | 54,300,000 | 2003 | AMD | 130nm | 101mm2 | 538,000 |
| AMD K8 (64-bit, large cache) | 105,900,000 | 2003 | AMD | 130nm | 193mm2 | 548,700 |
| Pentium M Banias (32-bit) | 77,000,000 | 2003 | Intel | 130nm | 83mm2 | 928,000 |
| Itanium 2 Madison 6M (64-bit) | 410,000,000 | 2003 | Intel | 130nm | 374mm2 | 1,096,000 |
| PlayStation 2 single chip (CPU + GPU) | 53,500,000 | 2003 | Sony, Toshiba | 90nm 130nm | 86mm2 | 622,100 |
| Pentium 4 Prescott (32-bit, large cache) | 112,000,000 | 2004 | Intel | 90nm | 110mm2 | 1,018,000 |
| Pentium M Dothan (32-bit) | 144,000,000 | 2004 | Intel | 90nm | 87mm2 | 1,655,000 |
| SPARC64 V+ (64-bit, large cache) | 400,000,000 | 2004 | Fujitsu | 90nm | 294mm2 | 1,360,000 |
| Itanium 2 (64-bit;9MB cache) | 592,000,000 | 2004 | Intel | 130nm | 432mm2 | 1,370,000 |
| Pentium 4 Prescott-2M (32-bit, large cache) | 169,000,000 | 2005 | Intel | 90nm | 143mm2 | 1,182,000 |
| Pentium D Smithfield (64-bit, large cache) | 228,000,000 | 2005 | Intel | 90nm | 206mm2 | 1,107,000 |
| Xenon (64-bit, 128-bit SIMD, large cache) | 165,000,000 | 2005 | IBM | 90nm | ? | ? |
| Cell (32-bit, cache) | 250,000,000 | 2005 | Sony, IBM, Toshiba | 90nm | 221mm2 | 1,131,000 |
| Pentium 4 Cedar Mill (32-bit, large cache) | 184,000,000 | 2006 | Intel | 65nm | 90mm2 | 2,044,000 |
| Pentium D Presler (64-bit, large cache) | 362,000,000 | 2006 | Intel | 65nm | 162mm2 | 2,235,000 |
| Core 2 Duo Conroe (dual-core 64-bit, large caches) | 291,000,000 | 2006 | Intel | 65nm | 143mm2 | 2,035,000 |
| Dual-core Itanium 2 (64-bit, SIMD, large caches) | 1,700,000,000 | 2006 | Intel | 90nm | 596mm2 | 2,852,000 |
| AMD K10 quad-core 2M L3 (64-bit, large caches) | 463,000,000 | 2007 | AMD | 65nm | 283mm2 | 1,636,000 |
| ARM Cortex-A9 (32-bit, (optional) SIMD, caches) | 26,000,000 | 2007 | ARM | 45nm | 31mm2 | 839,000 |
| Core 2 Duo Wolfdale (dual-core 64-bit, SIMD, caches) | 411,000,000 | 2007 | Intel | 45nm | 107mm2 | 3,841,000 |
| POWER6 (64-bit, large caches) | 789,000,000 | 2007 | IBM | 65nm | 341mm2 | 2,314,000 |
| Core 2 Duo Allendale (dual-core 64-bit, SIMD, large caches) | 169,000,000 | 2007 | Intel | 65nm | 111mm2 | 1,523,000 |
| Uniphier | 250,000,000 | 2007 | Matsushita | 45nm | ? | ? |
| SPARC64 VI (64-bit, SIMD, large caches) | 540,000,000 | 2007 | Fujitsu | 90nm | 421mm2 | 1,283,000 |
| Core 2 Duo Wolfdale 3M (dual-core 64-bit, SIMD, large caches) | 230,000,000 | 2008 | Intel | 45nm | 83mm2 | 2,771,000 |
| Core i7 (quad-core 64-bit, SIMD, large caches) | 731,000,000 | 2008 | Intel | 45nm | 263mm2 | 2,779,000 |
| AMD K10 quad-core 6M L3 (64-bit, SIMD, large caches) | 758,000,000 | 2008 | AMD | 45nm | 258mm2 | 2,938,000 |
| Atom (32-bit, large cache) | 47,000,000 | 2008 | Intel | 45nm | 24mm2 | 1,958,000 |
| SPARC64 VII (64-bit, SIMD, large caches) | 600,000,000 | 2008 | Fujitsu | 65nm | 445mm2 | 1,348,000 |
| Six-core Xeon 7400 (64-bit, SIMD, large caches) | 1,900,000,000 | 2008 | Intel | 45nm | 503mm2 | 3,777,000 |
| Six-core Opteron 2400 (64-bit, SIMD, large caches) | 904,000,000 | 2009 | AMD | 45nm | 346mm2 | 2,613,000 |
| SPARC64 VIIIfx (64-bit, SIMD, large caches) | 760,000,000 | 2009 | Fujitsu | 45nm | 513mm2 | 1,481,000 |
| Atom (Pineview) 64-bit, 1-core, 512 kB L2 cache | 123,000,000 | 2010 | Intel | 45nm | 66mm2 | 1,864,000 |
| Atom (Pineview) 64-bit, 2-core, 1 MB L2 cache | 176,000,000 | 2010 | Intel | 45nm | 87mm2 | 2,023,000 |
| SPARC T3 (16-core 64-bit, SIMD, large caches) | 1,000,000,000 | 2010 | Sun/Oracle | 40nm | 377mm2 | 2,653,000 |
| Six-core Core i7 (Gulftown) | 1,170,000,000 | 2010 | Intel | 32nm | 240mm2 | 4,875,000 |
| POWER7 32M L3 (8-core 64-bit, SIMD, large caches) | 1,200,000,000 | 2010 | IBM | 45nm | 567mm2 | 2,116,000 |
| Quad-core z196 (64-bit, very large caches) | 1,400,000,000 | 2010 | IBM | 45nm | 512mm2 | 2,734,000 |
| Quad-core Itanium Tukwila (64-bit, SIMD, large caches) | 2,000,000,000 | 2010 | Intel | 65nm | 699mm2 | 2,861,000 |
| Xeon Nehalem-EX (8-core 64-bit, SIMD, large caches) | 2,300,000,000 | 2010 | Intel | 45nm | 684mm2 | 3,363,000 |
| SPARC64 IXfx (64-bit, SIMD, large caches) | 1,870,000,000 | 2011 | Fujitsu | 40nm | 484mm2 | 3,864,000 |
| Quad-core + GPU Core i7 (64-bit, SIMD, large caches) | 1,160,000,000 | 2011 | Intel | 32nm | 216mm2 | 5,370,000 |
| Six-core Core i7/8-core Xeon E5 (Sandy Bridge-E/EP) (64-bit, SIMD, large caches) | 2,270,000,000 | 2011 | Intel | 32nm | 434mm2 | 5,230,000 |
| Xeon Westmere-EX (10-core 64-bit, SIMD, large caches) | 2,600,000,000 | 2011 | Intel | 32nm | 512mm2 | 5,078,000 |
| Atom "Medfield" (64-bit) | 432,000,000 | 2012 | Intel | 32nm | 64mm2 | 6,750,000 |
| SPARC64 X (64-bit, SIMD, caches) | 2,990,000,000 | 2012 | Fujitsu | 28nm | 600mm2 | 4,983,000 |
| AMD Bulldozer (8-core 64-bit, SIMD, caches) | 1,200,000,000 | 2012 | AMD | 32nm | 315mm2 | 3,810,000 |
| Quad-core + GPU AMD Trinity (64-bit, SIMD, caches) | 1,303,000,000 | 2012 | AMD | 32nm | 246mm2 | 5,297,000 |
| Quad-core + GPU Core i7 Ivy Bridge (64-bit, SIMD, caches) | 1,400,000,000 | 2012 | Intel | 22nm | 160mm2 | 8,750,000 |
| POWER7+ (8-core 64-bit, SIMD, 80MB L3 cache) | 2,100,000,000 | 2012 | IBM | 32nm | 567mm2 | 3,704,000 |
| Six-core zEC12 (64-bit, SIMD, large caches) | 2,750,000,000 | 2012 | IBM | 32nm | 597mm2 | 4,606,000 |
| Itanium Poulson (8-core 64-bit, SIMD, caches) | 3,100,000,000 | 2012 | Intel | 32nm | 544mm2 | 5,699,000 |
| Xeon Phi (61-core 32-bit, 512-bit SIMD, caches) | 5,000,000,000 | 2012 | Intel | 22nm | 720mm2 | 6,944,000 |
| Apple A7 (dual-core 64/32-bit ARM64, "mobile SoC", SIMD, caches) | 1,000,000,000 | 2013 | Apple | 28nm | 102mm2 | 9,804,000 |
| Six-core Core i7 Ivy Bridge E (64-bit, SIMD, caches) | 1,860,000,000 | 2013 | Intel | 22nm | 256mm2 | 7,266,000 |
| POWER8 (12-core 64-bit, SIMD, caches) | 4,200,000,000 | 2013 | IBM | 22nm | 650mm2 | 6,462,000 |
| Xbox One main SoC (64-bit, SIMD, caches) | 5,000,000,000 | 2013 | Microsoft, AMD | 28nm | 363mm2 | 13,770,000 |
| Quad-core + GPU Core i7 Haswell (64-bit, SIMD, caches) | 1,400,000,000 | 2014 | Intel | 22nm | 177mm2 | 7,910,000 |
| Apple A8 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 2,000,000,000 | 2014 | Apple | 20nm | 89mm2 | 22,470,000 |
| Core i7 Haswell-E (8-core 64-bit, SIMD, caches) | 2,600,000,000 | 2014 | Intel | 22nm | 355mm2 | 7,324,000 |
| Apple A8X (tri-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 3,000,000,000 | 2014 | Apple | 20nm | 128mm2 | 23,440,000 |
| Xeon Ivy Bridge-EX (15-core 64-bit, SIMD, caches) | 4,310,000,000 | 2014 | Intel | 22nm | 541mm2 | 7,967,000 |
| Xeon Haswell-E5 (18-core 64-bit, SIMD, caches) | 5,560,000,000 | 2014 | Intel | 22nm | 661mm2 | 8,411,000 |
| Quad-core + GPU GT2 Core i7 Skylake K (64-bit, SIMD, caches) | 1,750,000,000 | 2015 | Intel | 14nm | 122mm2 | 14,340,000 |
| Dual-core + GPU Iris Core i7 Broadwell-U (64-bit, SIMD, caches) | 1,900,000,000 | 2015 | Intel | 14nm | 133mm2 | 14,290,000 |
| Apple A9 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 2,000,000,000+ | 2015 | Apple | 14nm (Samsung) | 96mm2 (Samsung) | 20,800,000+ |
| 16nm (TSMC) | 104.5mm2 (TSMC) | 19,100,000+ | ||||
| Apple A9X (dual core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 3,000,000,000+ | 2015 | Apple | 16nm | 143.9mm2 | 20,800,000+ |
| IBM z13 (64-bit, caches) | 3,990,000,000 | 2015 | IBM | 22nm | 678mm2 | 5,885,000 |
| IBM z13 Storage Controller | 7,100,000,000 | 2015 | IBM | 22nm | 678mm2 | 10,472,000 |
| SPARC M7 (32-core 64-bit, SIMD, caches) | 10,000,000,000 | 2015 | Oracle | 20nm | ? | ? |
| Core i7 Broadwell-E (10-core 64-bit, SIMD, caches) | 3,200,000,000 | 2016 | Intel | 14nm | 246mm2 | 13,010,000 |
| Apple A10 Fusion (quad-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 3,300,000,000 | 2016 | Apple | 16nm | 125mm2 | 26,400,000 |
| HiSilicon Kirin 960 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 4,000,000,000 | 2016 | Huawei | 16nm | 110.00mm2 | 36,360,000 |
| Xeon Broadwell-E5 (22-core 64-bit, SIMD, caches) | 7,200,000,000 | 2016 | Intel | 14nm | 456mm2 | 15,790,000 |
| Xeon Phi (72-core 64-bit, 512-bit SIMD, caches) | 8,000,000,000 | 2016 | Intel | 14nm | 683mm2 | 11,710,000 |
| Zip CPU (32-bit, for FPGAs) | 1,286 6-LUTs | 2016 | Gisselquist Technology | ? | ? | ? |
| Qualcomm Snapdragon 835 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 3,000,000,000 | 2016 | Qualcomm | 10nm | 72.3mm2 | 41,490,000 |
| Apple A11 Bionic (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 4,300,000,000 | 2017 | Apple | 10nm | 89.23mm2 | 48,190,000 |
| AMD Zen CCX (core complex unit: 4 cores, 8 MB L3 cache) | 1,400,000,000 | 2017 | AMD | 14nm (GF14LPP) | 44mm2 | 31,800,000 |
| AMD Zeppelin SoC Ryzen (64-bit, SIMD, caches) | 4,800,000,000 | 2017 | AMD | 14nm | 192mm2 | 25,000,000 |
| AMD Ryzen 5 1600 Ryzen (64-bit, SIMD, caches) | 4,800,000,000 | 2017 | AMD | 14nm | 213mm2 | 22,530,000 |
| IBM z14 (64-bit, SIMD, caches) | 6,100,000,000 | 2017 | IBM | 14nm | 696mm2 | 8,764,000 |
| IBM z14 Storage Controller (64-bit) | 9,700,000,000 | 2017 | IBM | 14nm | 696mm2 | 13,940,000 |
| HiSilicon Kirin 970 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 5,500,000,000 | 2017 | Huawei | 10nm | 96.72mm2 | 56,900,000 |
| Xbox One X (Project Scorpio) main SoC (64-bit, SIMD, caches) | 7,000,000,000 | 2017 | Microsoft, AMD | 16nm | 360mm2 | 19,440,000 |
| Xeon Platinum 8180 (28-core 64-bit, SIMD, caches) | 8,000,000,000 | 2017 | Intel | 14nm | ? | ? |
| Xeon (unspecified) | 7,100,000,000 | 2017 | Intel | 14nm | 672mm2 | 10,570,000 |
| POWER9 (64-bit, SIMD, caches) | 8,000,000,000 | 2017 | IBM | 14nm | 695mm2 | 11,500,000 |
| Freedom U500 Base Platform Chip (E51, 4×U54) RISC-V (64-bit, caches) | 250,000,000 | 2017 | SiFive | 28nm | ~30mm2 | 8,330,000 |
| SPARC64 XII (12-core 64-bit, SIMD, caches) | 5,450,000,000 | 2017 | Fujitsu | 20nm | 795mm2 | 6,850,000 |
| Apple A10X Fusion (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 4,300,000,000 | 2017 | Apple | 10nm | 96.40mm2 | 44,600,000 |
| Centriq 2400 (64/32-bit, SIMD, caches) | 18,000,000,000 | 2017 | Qualcomm | 10nm | 398mm2 | 45,200,000 |
| AMD Epyc (32-core 64-bit, SIMD, caches) | 19,200,000,000 | 2017 | AMD | 14nm | 768mm2 | 25,000,000 |
| Qualcomm Snapdragon 845 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 5,300,000,000 | 2017 | Qualcomm | 10nm | 94mm2 | 56,400,000 |
| Qualcomm Snapdragon 850 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 5,300,000,000 | 2017 | Qualcomm | 10nm | 94mm2 | 56,400,000 |
| HiSilicon Kirin 710 (octa-core ARM64 "mobile SoC", SIMD, caches) | 5,500,000,000 | 2018 | Huawei | 12nm | ? | ? |
| Apple A12 Bionic (hexa-core ARM64 "mobile SoC", SIMD, caches) | 6,900,000,000 | 2018 | Apple | 7nm | 83.27mm2 | 82,900,000 |
| HiSilicon Kirin 980 (octa-core ARM64 "mobile SoC", SIMD, caches) | 6,900,000,000 | 2018 | Huawei | 7nm | 74.13mm2 | 93,100,000 |
| Qualcomm Snapdragon 8cx / SCX8180 (octa-core ARM64 "mobile SoC", SIMD, caches) | 8,500,000,000 | 2018 | Qualcomm | 7nm | 112mm2 | 75,900,000 |
| Apple A12X Bionic (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 10,000,000,000 | 2018 | Apple | 7nm | 122mm2 | 82,000,000 |
| Fujitsu A64FX (64/32-bit, SIMD, caches) | 8,786,000,000 | 2018 | Fujitsu | 7nm | ? | ? |
| Tegra Xavier SoC (64/32-bit) | 9,000,000,000 | 2018 | Nvidia | 12nm | 350mm2 | 25,700,000 |
| Qualcomm Snapdragon 855 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 6,700,000,000 | 2018 | Qualcomm | 7nm | 73mm2 | 91,800,000 |
| AMD Zen 2 core (0.5 MB L2 + 4 MB L3 cache) | 475,000,000 | 2019 | AMD | 7nm | 7.83mm2 | 60,664,000 |
| AMD Zen 2 CCX (core complex: 4 cores, 16 MB L3 cache) | 1,900,000,000 | 2019 | AMD | 7nm | 31.32mm2 | 60,664,000 |
| AMD Zen 2 CCD (core complex die: 8 cores, 32 MB L3 cache) | 3,800,000,000 | 2019 | AMD | 7nm | 74mm2 | 51,350,000 |
| AMD Zen 2 client I/O die | 2,090,000,000 | 2019 | AMD | 12nm | 125mm2 | 16,720,000 |
| AMD Zen 2 server I/O die | 8,340,000,000 | 2019 | AMD | 12nm | 416mm2 | 20,050,000 |
| AMD Zen 2 Renoir die | 9,800,000,000 | 2019 | AMD | 7nm | 156mm2 | 62,820,000 |
| AMD Ryzen 7 3700X (64-bit, SIMD, caches, I/O die) | 5,990,000,000 | 2019 | AMD | 7 & 12nm (TSMC) | 199 (74+125)mm2 | 30,100,000 |
| HiSilicon Kirin 990 4G | 8,000,000,000 | 2019 | Huawei | 7nm | 90.00mm2 | 89,000,000 |
| Apple A13 (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches) | 8,500,000,000 | 2019 | Apple | 7nm | 98.48mm2 | 86,300,000 |
| IBM z15 CP chip (12 cores, 256 MB L3 cache) | 9,200,000,000 | 2019 | IBM | 14nm | 696mm2 | 13,220,000 |
| IBM z15 SC chip (960 MB L4 cache) | 12,200,000,000 | 2019 | IBM | 14nm | 696mm2 | 17,530,000 |
| AMD Ryzen 9 3900X (64-bit, SIMD, caches, I/O die) | 9,890,000,000 | 2019 | AMD | 7 & 12nm (TSMC) | 273mm2 | 36,230,000 |
| HiSilicon Kirin 990 5G | 10,300,000,000 | 2019 | Huawei | 7nm | 113.31mm2 | 90,900,000 |
| AWS Graviton2 (64-bit, 64-core ARM-based, SIMD, caches) | 30,000,000,000 | 2019 | Amazon | 7nm | ? | ? |
| AMD Epyc Rome (64-bit, SIMD, caches) | 39,540,000,000 | 2019 | AMD | 7 & 12nm (TSMC) | 1,008mm2 | 39,226,000 |
| Qualcomm Snapdragon 865 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches) | 10,300,000,000 | 2019 | Qualcomm | 7nm | 83.54mm2 | 123,300,000 |
| TI Jacinto TDA4VM (ARM A72, DSP, SRAM) | 3,500,000,000 | 2020 | Texas Instruments | 16nm | ? | ? |
| Apple A14 Bionic (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches) | 11,800,000,000 | 2020 | Apple | 5nm | 88mm2 | 134,100,000 |
| Apple M1 (octa-core 64-bit ARM64 SoC, SIMD, caches) | 16,000,000,000 | 2020 | Apple | 5nm | 119mm2 | 134,500,000 |
| HiSilicon Kirin 9000 | 15,300,000,000 | 2020 | Huawei | 5nm | 114mm2 | 134,200,000 |
| AMD Zen 3 CCX (core complex unit: 8 cores, 32 MB L3 cache) | 4,080,000,000 | 2020 | AMD | 7nm | 68mm2 | 60,000,000 |
| AMD Zen 3 CCD (core complex die) | 4,150,000,000 | 2020 | AMD | 7nm | 81mm2 | 51,230,000 |
| Core 11th gen Rocket Lake (8-core 64-bit, SIMD, large caches) | 6,000,000,000+ | 2021 | Intel | 14nm +++ 14nm | 276mm2 | 37,500,000 or 21,800,000+ |
| AMD Ryzen 7 5800H (64-bit, SIMD, caches, I/O and GPU) | 10,700,000,000 | 2021 | AMD | 7nm | 180mm2 | 59,440,000 |
| AMD Epyc 7763 (Milan) (64-core, 64-bit) | ? | 2021 | AMD | 7 & 12nm (TSMC) | 1,064mm2 (8×81+416) | ? |
| Apple A15 | 15,000,000,000 | 2021 | Apple | 5nm | 107.68mm2 | 139,300,000 |
| Apple M1 Pro (10-core, 64-bit) | 33,700,000,000 | 2021 | Apple | 5nm | 245mm2 | 137,600,000 |
| Apple M1 Max (10-core, 64-bit) | 57,000,000,000 | 2021 | Apple | 5nm | 420.2mm2 | 135,600,000 |
| Power10 dual-chip module (30 SMT8 cores or 60 SMT4 cores) | 36,000,000,000 | 2021 | IBM | 7nm | 1,204mm2 | 29,900,000 |
| Dimensity 9000 (ARM64 SoC) | 15,300,000,000 | 2021 | Mediatek | 4nm (TSMC N4) | ? | ? |
| Apple A16 (ARM64 SoC) | 16,000,000,000 | 2022 | Apple | 4nm | ? | ? |
| Apple M1 Ultra (dual-chip module, 2×10 cores) | 114,000,000,000 | 2022 | Apple | 5nm | 840.5mm2 | 135,600,000 |
| AMD Epyc 7773X (Milan-X) (multi-chip module, 64 cores, 768 MB L3 cache) | 26,000,000,000 + Milan | 2022 | AMD | 7 & 12nm (TSMC) | 1,352mm2 (Milan + 8×36) | ? |
| IBM Telum dual-chip module (2×8 cores, 2×256 MB cache) | 45,000,000,000 | 2022 | IBM | 7nm (Samsung) | 1,060mm2 | 42,450,000 |
| Apple M2 (octa-core 64-bit ARM64 SoC, SIMD, caches) | 20,000,000,000 | 2022 | Apple | 5nm | ? | ? |
| Dimensity 9200 (ARM64 SoC) | 17,000,000,000 | 2022 | Mediatek | 4nm (TSMC N4P) | ? | ? |
| Qualcomm Snapdragon 8 Gen 2 (octa-core ARM64 "mobile SoC", SIMD, caches) | 16,000,000,000 | 2022 | Qualcomm | 4nm | 268mm2 | 59,701,492 |
| AMD EPYC Genoa (4th gen/9004 series) 13-chip module (up to 96 cores and 384 MB (L3) + 96 MB (L2) cache) | 90,000,000,000 | 2022 | AMD | 5nm (CCD) 6nm (IOD) | 1,263.34mm2 12×72.225 (CCD) 396.64 (IOD) | 71,240,000 |
| HiSilicon Kirin 9000s | 9,510,000,000 | 2023 | Huawei | 7nm | 107mm2 | 107,690,000 |
| Apple M4 (deca-core 64-bit ARM64 SoC, SIMD, caches) | 28,000,000,000 | 2024 | Apple | 3nm | ? | ? |
| Apple M3 (octa-core 64-bit ARM64 SoC, SIMD, caches) | 25,000,000,000 | 2023 | Apple | 3nm | ? | ? |
| Apple M3 Pro (dodeca-core 64-bit ARM64 SoC, SIMD, caches) | 37,000,000,000 | 2023 | Apple | 3nm | ? | ? |
| Apple M3 Max (16-core 64-bit ARM64 SoC, SIMD, caches) | 92,000,000,000 | 2023 | Apple | 3nm | ? | ? |
| Apple A17 | 19,000,000,000 | 2023 | Apple | 3nm | 103.8mm2 | 183,044,315 |
| Sapphire Rapids quad-chip module (up to 60 cores and 112.5 MB of cache) | 44,000,000,000– 48,000,000,000 | 2023 | Intel | 10nm ESF (Intel 7) | 1,600mm2 | 27,500,000– 30,000,000 |
| Apple M2 Pro (12-core 64-bit ARM64 SoC, SIMD, caches) | 40,000,000,000 | 2023 | Apple | 5nm | ? | ? |
| Apple M2 Max (12-core 64-bit ARM64 SoC, SIMD, caches) | 67,000,000,000 | 2023 | Apple | 5nm | ? | ? |
| Apple M2 Ultra (two M2 Max dies) | 134,000,000,000 | 2023 | Apple | 5nm | ? | ? |
| AMD Epyc Bergamo (4th gen/97X4 series) 9-chip module (up to 128 cores and 256 MB (L3) + 128 MB (L2) cache) | 82,000,000,000 | 2023 | AMD | 5nm (CCD) 6nm (IOD) | ? | ? |
| AMD Instinct MI300A (multi-chip module, 24 cores, 128GB GPU memory + 256MB (LLC/L3) cache) | 146,000,000,000 | 2023 | AMD | 5nm (CCD, GCD) 6nm (IOD) | 1,017mm2 | 144,000,000 |
| RV32-WUJI: 3-atom-thick molybdenum disulfide on sapphire; RISC-V architecture | 5931 | 2025 | ? | 3000nm | ? | ? |
| NVIDIA Vera (multi-chip module, 88-cores 64-bit Armv9.2, 176MB L2 + 162MB L3 cache) | 227,000,000,000 | 2026 | Nvidia | 3nm | ? | ? |
| Processor | Transistor count | Year | Designer | Process (nm) | Area (mm2) | Transistor density (tr./mm2) |
GPUs
A graphics processing unit (GPU) is a specialized electronic circuit designed to rapidly manipulate and alter memory to accelerate the building of images in a frame buffer intended for output to a display.
The designer refers to the technology company that designs the logic of the integrated circuit chip (such as Nvidia and AMD). The manufacturer ("Fab.") refers to the semiconductor company that fabricates the chip using its semiconductor manufacturing process at a foundry (such as TSMC and Samsung Semiconductor). The transistor count in a chip is dependent on a manufacturer's fabrication process, with smaller semiconductor nodes typically enabling higher transistor density and thus higher transistor counts.
The random-access memory (RAM) that comes with GPUs (such as VRAM, SGRAM or HBM) greatly increases the total transistor count, with the memory typically accounting for the majority of transistors in a graphics card. For example, Nvidia's Tesla P100 has 15billion FinFETs (16 nm) in the GPU in addition to 16GB of HBM2 memory, totaling about 150billion MOSFETs on the graphics card. The following table does not include the memory. For memory transistor counts, see the Memory section below.
| Processor | Transistor count | Year | Designer(s) | Fab(s) | Process | Area | Transistor density (tr./mm2) | Ref |
|---|---|---|---|---|---|---|---|---|
| μPD7220 GDC | 40,000 | 1982 | NEC | NEC | 5,000nm | ? | ? | |
| ARTC HD63484 | 60,000 | 1984 | Hitachi | Hitachi | ? | ? | ? | |
| CBM Agnus | 21,000 | 1985 | Commodore | CSG | 5,000nm | ? | ? | |
| YM7101 VDP | 100,000 | 1988 | Yamaha, Sega | Yamaha | ? | ? | ? | |
| Tom & Jerry | 750,000 | 1993 | Flare | IBM | ? | ? | ? | |
| VDP1 | 1,000,000 | 1994 | Sega | Hitachi | 500nm | ? | ? | |
| Sony GPU | 1,000,000 | 1994 | Toshiba | LSI | 500nm | ? | ? | |
| NV1 | 1,000,000 | 1995 | Nvidia, Sega | SGS | 500nm | 90mm2 | 11,000 | |
| Reality Coprocessor | 2,600,000 | 1996 | SGI | NEC | 350 nm | 81mm2 | 32,100 | |
| PowerVR | 1,200,000 | 1996 | VideoLogic | NEC | 350nm | ? | ? | |
| Voodoo Graphics | 1,000,000 | 1996 | 3dfx | TSMC | 500nm | ? | ? | |
| Voodoo Rush | 1,000,000 | 1997 | 3dfx | TSMC | 500nm | ? | ? | |
| NV3 | 3,500,000 | 1997 | Nvidia | SGS, TSMC | 350nm | 90mm2 | 38,900 | |
| i740 | 3,500,000 | 1998 | Intel, Real3D | Real3D | 350nm | ? | ? | |
| Voodoo 2 | 4,000,000 | 1998 | 3dfx | TSMC | 350nm | ? | ? | |
| Voodoo Rush | 4,000,000 | 1998 | 3dfx | TSMC | 350nm | ? | ? | |
| NV4 | 7,000,000 | 1998 | Nvidia | TSMC | 350nm | 90mm2 | 78,000 | |
| PowerVR2 CLX2 | 10,000,000 | 1998 | VideoLogic | NEC | 250nm | 116mm2 | 86,200 | |
| PowerVR2 PMX1 | 6,000,000 | 1999 | VideoLogic | NEC | 250nm | ? | ? | |
| Rage 128 | 8,000,000 | 1999 | ATI | TSMC, UMC | 250nm | 70mm2 | 114,000 | |
| Voodoo 3 | 8,100,000 | 1999 | 3dfx | TSMC | 250nm | ? | ? | |
| Graphics Synthesizer | 43,000,000 | 1999 | Sony, Toshiba | Sony, Toshiba | 180 nm | 279mm2 | 154,000 | |
| NV5 | 15,000,000 | 1999 | Nvidia | TSMC | 250nm | 90mm2 | 167,000 | |
| NV10 | 17,000,000 | 1999 | Nvidia | TSMC | 220nm | 111mm2 | 153,000 | |
| NV11 | 20,000,000 | 2000 | Nvidia | TSMC | 180nm | 65mm2 | 308,000 | |
| NV15 | 25,000,000 | 2000 | Nvidia | TSMC | 180nm | 81mm2 | 309,000 | |
| Voodoo 4 | 14,000,000 | 2000 | 3dfx | TSMC | 220nm | ? | ? | |
| Voodoo 5 | 28,000,000 | 2000 | 3dfx | TSMC | 220nm | ? | ? | |
| R100 | 30,000,000 | 2000 | ATI | TSMC | 180nm | 97mm2 | 309,000 | |
| Flipper | 51,000,000 | 2000 | ArtX | NEC | 180nm | 106mm2 | 481,000 | |
| PowerVR3 KYRO | 14,000,000 | 2001 | Imagination | ST | 250nm | ? | ? | |
| PowerVR3 KYRO II | 15,000,000 | 2001 | Imagination | ST | 180nm | |||
| NV2A | 60,000,000 | 2001 | Nvidia | TSMC | 150nm | ? | ? | |
| NV20 | 57,000,000 | 2001 | Nvidia | TSMC | 150nm | 128mm2 | 445,000 | |
| NV25 | 63,000,000 | 2002 | Nvidia | TSMC | 150nm | 142mm2 | 444,000 | |
| NV28 | 36,000,000 | 2002 | Nvidia | TSMC | 150nm | 101mm2 | 356,000 | |
| NV17/18 | 29,000,000 | 2002 | Nvidia | TSMC | 150nm | 65mm2 | 446,000 | |
| R200 | 60,000,000 | 2001 | ATI | TSMC | 150nm | 68mm2 | 882,000 | |
| R300 | 107,000,000 | 2002 | ATI | TSMC | 150nm | 218mm2 | 490,800 | |
| R360 | 117,000,000 | 2003 | ATI | TSMC | 150nm | 218mm2 | 536,700 | |
| NV34 | 45,000,000 | 2003 | Nvidia | TSMC | 150nm | 124mm2 | 363,000 | |
| NV34b | 45,000,000 | 2004 | Nvidia | TSMC | 140nm | 91mm2 | 495,000 | |
| NV30 | 125,000,000 | 2003 | Nvidia | TSMC | 130 nm | 199mm2 | 628,000 | |
| NV31 | 80,000,000 | 2003 | Nvidia | TSMC | 130 nm | 121mm2 | 661,000 | |
| NV35/38 | 135,000,000 | 2003 | Nvidia | TSMC | 130 nm | 207mm2 | 652,000 | |
| NV36 | 82,000,000 | 2003 | Nvidia | IBM | 130 nm | 133mm2 | 617,000 | |
| R480 | 160,000,000 | 2004 | ATI | TSMC | 130nm | 297mm2 | 538,700 | |
| NV40 | 222,000,000 | 2004 | Nvidia | IBM | 130nm | 305mm2 | 727,900 | |
| NV44 | 75,000,000 | 2004 | Nvidia | IBM | 130nm | 110mm2 | 681,800 | |
| NV41 | 222,000,000 | 2005 | Nvidia | TSMC | 110nm | 225mm2 | 986,700 | |
| NV42 | 198,000,000 | 2005 | Nvidia | TSMC | 110nm | 222mm2 | 891,900 | |
| NV43 | 146,000,000 | 2005 | Nvidia | TSMC | 110nm | 154mm2 | 948,100 | |
| G70 | 303,000,000 | 2005 | Nvidia | TSMC, Chartered | 110nm | 333mm2 | 909,900 | |
| Xenos | 232,000,000 | 2005 | ATI | TSMC | 90 nm | 182mm2 | 1,275,000 | |
| RSX Reality Synthesizer | 300,000,000 | 2005 | Nvidia, Sony | Sony | 90nm | 186mm2 | 1,613,000 | |
| R520 | 321,000,000 | 2005 | ATI | TSMC | 90nm | 288mm2 | 1,115,000 | |
| RV530 | 157,000,000 | 2005 | ATI | TSMC | 90nm | 150mm2 | 1,047,000 | |
| RV515 | 107,000,000 | 2005 | ATI | TSMC | 90nm | 100mm2 | 1,070,000 | |
| R580 | 384,000,000 | 2006 | ATI | TSMC | 90nm | 352mm2 | 1,091,000 | |
| G71 | 278,000,000 | 2006 | Nvidia | TSMC | 90nm | 196mm2 | 1,418,000 | |
| G72 | 112,000,000 | 2006 | Nvidia | TSMC | 90nm | 81mm2 | 1,383,000 | |
| G73 | 177,000,000 | 2006 | Nvidia | TSMC | 90nm | 125mm2 | 1,416,000 | |
| G80 | 681,000,000 | 2006 | Nvidia | TSMC | 90nm | 480mm2 | 1,419,000 | |
| G86 Tesla | 210,000,000 | 2007 | Nvidia | TSMC | 80nm | 127mm2 | 1,654,000 | |
| G84 Tesla | 289,000,000 | 2007 | Nvidia | TSMC | 80nm | 169mm2 | 1,710,000 | |
| RV560 | 330,000,000 | 2006 | ATI | TSMC | 80nm | 230mm2 | 1,435,000 | |
| R600 | 700,000,000 | 2007 | ATI | TSMC | 80nm | 420mm2 | 1,667,000 | |
| RV610 | 180,000,000 | 2007 | ATI | TSMC | 65nm | 85mm2 | 2,118,000 | |
| RV630 | 390,000,000 | 2007 | ATI | TSMC | 65nm | 153mm2 | 2,549,000 | |
| G92 | 754,000,000 | 2007 | Nvidia | TSMC, UMC | 65 nm | 324mm2 | 2,327,000 | |
| G94 Tesla | 505,000,000 | 2008 | Nvidia | TSMC | 65nm | 240mm2 | 2,104,000 | |
| G96 Tesla | 314,000,000 | 2008 | Nvidia | TSMC | 65nm | 144mm2 | 2,181,000 | |
| G98 Tesla | 210,000,000 | 2008 | Nvidia | TSMC | 65nm | 86mm2 | 2,442,000 | |
| GT200 | 1,400,000,000 | 2008 | Nvidia | TSMC | 65nm | 576mm2 | 2,431,000 | |
| RV620 | 181,000,000 | 2008 | ATI | TSMC | 55nm | 67mm2 | 2,701,000 | |
| RV635 | 378,000,000 | 2008 | ATI | TSMC | 55nm | 135mm2 | 2,800,000 | |
| RV710 | 242,000,000 | 2008 | ATI | TSMC | 55nm | 73mm2 | 3,315,000 | |
| RV730 | 514,000,000 | 2008 | ATI | TSMC | 55nm | 146mm2 | 3,521,000 | |
| RV670 | 666,000,000 | 2008 | ATI | TSMC | 55nm | 192mm2 | 3,469,000 | |
| RV770 | 956,000,000 | 2008 | ATI | TSMC | 55nm | 256mm2 | 3,734,000 | |
| RV790 | 959,000,000 | 2008 | ATI | TSMC | 55nm | 282mm2 | 3,401,000 | |
| G92b Tesla | 754,000,000 | 2008 | Nvidia | TSMC, UMC | 55nm | 260mm2 | 2,900,000 | |
| G94b Tesla | 505,000,000 | 2008 | Nvidia | TSMC, UMC | 55nm | 196mm2 | 2,577,000 | |
| G96b Tesla | 314,000,000 | 2008 | Nvidia | TSMC, UMC | 55nm | 121mm2 | 2,595,000 | |
| GT200b Tesla | 1,400,000,000 | 2008 | Nvidia | TSMC, UMC | 55nm | 470mm2 | 2,979,000 | |
| GT218 Tesla | 260,000,000 | 2009 | Nvidia | TSMC | 40 nm | 57mm2 | 4,561,000 | |
| GT216 Tesla | 486,000,000 | 2009 | Nvidia | TSMC | 40nm | 100mm2 | 4,860,000 | |
| GT215 Tesla | 727,000,000 | 2009 | Nvidia | TSMC | 40nm | 144mm2 | 5,049,000 | |
| RV740 | 826,000,000 | 2009 | ATI | TSMC | 40nm | 137mm2 | 6,029,000 | |
| Cypress RV870 | 2,154,000,000 | 2009 | ATI | TSMC | 40nm | 334mm2 | 6,449,000 | |
| Juniper RV840 | 1,040,000,000 | 2009 | ATI | TSMC | 40nm | 166mm2 | 6,265,000 | |
| Redwood RV830 | 627,000,000 | 2010 | AMD (ATI) | TSMC | 40nm | 104mm2 | 6,029,000 | |
| Cedar RV810 | 292,000,000 | 2010 | AMD | TSMC | 40nm | 59mm2 | 4,949,000 | |
| Cayman RV970 | 2,640,000,000 | 2010 | AMD | TSMC | 40nm | 389mm2 | 6,789,000 | |
| Barts RV940 | 1,700,000,000 | 2010 | AMD | TSMC | 40nm | 255mm2 | 6,667,000 | |
| Turks RV930 | 716,000,000 | 2011 | AMD | TSMC | 40nm | 118mm2 | 6,068,000 | |
| Caicos RV910 | 370,000,000 | 2011 | AMD | TSMC | 40nm | 67mm2 | 5,522,000 | |
| GF100 Fermi | 3,200,000,000 | 2010 | Nvidia | TSMC | 40nm | 526mm2 | 6,084,000 | |
| GF110 Fermi | 3,000,000,000 | 2010 | Nvidia | TSMC | 40nm | 520mm2 | 5,769,000 | |
| GF104 Fermi | 1,950,000,000 | 2011 | Nvidia | TSMC | 40nm | 332mm2 | 5,873,000 | |
| GF106 Fermi | 1,170,000,000 | 2010 | Nvidia | TSMC | 40nm | 238mm2 | 4,916,000 | |
| GF108 Fermi | 585,000,000 | 2011 | Nvidia | TSMC | 40nm | 116mm2 | 5,043,000 | |
| GF119 Fermi | 292,000,000 | 2011 | Nvidia | TSMC | 40nm | 79mm2 | 3,696,000 | |
| Tahiti GCN1 | 4,312,711,873 | 2011 | AMD | TSMC | 28nm | 365mm2 | 11,820,000 | |
| Cape Verde GCN1 | 1,500,000,000 | 2012 | AMD | TSMC | 28nm | 123mm2 | 12,200,000 | |
| Pitcairn GCN1 | 2,800,000,000 | 2012 | AMD | TSMC | 28nm | 212mm2 | 13,210,000 | |
| GK110 Kepler | 7,080,000,000 | 2012 | Nvidia | TSMC | 28nm | 561mm2 | 12,620,000 | |
| GK104 Kepler | 3,540,000,000 | 2012 | Nvidia | TSMC | 28nm | 294mm2 | 12,040,000 | |
| GK106 Kepler | 2,540,000,000 | 2012 | Nvidia | TSMC | 28nm | 221mm2 | 11,490,000 | |
| GK107 Kepler | 1,270,000,000 | 2012 | Nvidia | TSMC | 28nm | 118mm2 | 10,760,000 | |
| GK208 Kepler | 1,020,000,000 | 2013 | Nvidia | TSMC | 28nm | 79mm2 | 12,910,000 | |
| Oland GCN1 | 1,040,000,000 | 2013 | AMD | TSMC | 28nm | 90mm2 | 11,560,000 | |
| Bonaire GCN2 | 2,080,000,000 | 2013 | AMD | TSMC | 28nm | 160mm2 | 13,000,000 | |
| Durango (Xbox One) | 4,800,000,000 | 2013 | AMD | TSMC | 28nm | 375mm2 | 12,800,000 | |
| Liverpool (PlayStation 4) | ? | 2013 | AMD | TSMC | 28nm | 348mm2 | ? | |
| Hawaii GCN2 | 6,300,000,000 | 2013 | AMD | TSMC | 28nm | 438mm2 | 14,380,000 | |
| GM200 Maxwell | 8,000,000,000 | 2015 | Nvidia | TSMC | 28nm | 601mm2 | 13,310,000 | |
| GM204 Maxwell | 5,200,000,000 | 2014 | Nvidia | TSMC | 28nm | 398mm2 | 13,070,000 | |
| GM206 Maxwell | 2,940,000,000 | 2014 | Nvidia | TSMC | 28nm | 228mm2 | 12,890,000 | |
| GM107 Maxwell | 1,870,000,000 | 2014 | Nvidia | TSMC | 28nm | 148mm2 | 12,640,000 | |
| Tonga GCN3 | 5,000,000,000 | 2014 | AMD | TSMC, GlobalFoundries | 28nm | 366mm2 | 13,660,000 | |
| Fiji GCN3 | 8,900,000,000 | 2015 | AMD | TSMC | 28nm | 596mm2 | 14,930,000 | |
| Durango 2 (Xbox One S) | 5,000,000,000 | 2016 | AMD | TSMC | 16nm | 240mm2 | 20,830,000 | |
| Neo (PlayStation 4 Pro) | 5,700,000,000 | 2016 | AMD | TSMC | 16nm | 325mm2 | 17,540,000 | |
| Ellesmere/Polaris10GCN4 | 5,700,000,000 | 2016 | AMD | Samsung, GlobalFoundries | 14nm | 232mm2 | 24,570,000 | |
| Baffin/Polaris 11 GCN4 | 3,000,000,000 | 2016 | AMD | Samsung, GlobalFoundries | 14 nm | 123mm2 | 24,390,000 | |
| Lexa/Polaris 12 GCN4 | 2,200,000,000 | 2017 | AMD | Samsung, GlobalFoundries | 14nm | 101mm2 | 21,780,000 | |
| GP100 Pascal | 15,300,000,000 | 2016 | Nvidia | TSMC, Samsung | 16nm | 610mm2 | 25,080,000 | |
| GP102 Pascal | 11,800,000,000 | 2016 | Nvidia | TSMC, Samsung | 16nm | 471mm2 | 25,050,000 | |
| GP104 Pascal | 7,200,000,000 | 2016 | Nvidia | TSMC | 16nm | 314mm2 | 22,930,000 | |
| GP106 Pascal | 4,400,000,000 | 2016 | Nvidia | TSMC | 16nm | 200mm2 | 22,000,000 | |
| GP107 Pascal | 3,300,000,000 | 2016 | Nvidia | Samsung | 14nm | 132mm2 | 25,000,000 | |
| GP108 Pascal | 1,850,000,000 | 2017 | Nvidia | Samsung | 14nm | 74mm2 | 25,000,000 | |
| Scorpio (Xbox One X) | 6,600,000,000 | 2017 | AMD | TSMC | 16nm | 367mm2 | 17,980,000 | |
| Vega 10 GCN5 | 12,500,000,000 | 2017 | AMD | Samsung, GlobalFoundries | 14nm | 484mm2 | 25,830,000 | |
| GV100 Volta | 21,100,000,000 | 2017 | Nvidia | TSMC | 12 nm | 815mm2 | 25,890,000 | |
| TU102 Turing | 18,600,000,000 | 2018 | Nvidia | TSMC | 12nm | 754mm2 | 24,670,000 | |
| TU104 Turing | 13,600,000,000 | 2018 | Nvidia | TSMC | 12nm | 545mm2 | 24,950,000 | |
| TU106 Turing | 10,800,000,000 | 2018 | Nvidia | TSMC | 12nm | 445mm2 | 24,270,000 | |
| TU116 Turing | 6,600,000,000 | 2019 | Nvidia | TSMC | 12nm | 284mm2 | 23,240,000 | |
| TU117 Turing | 4,700,000,000 | 2019 | Nvidia | TSMC | 12nm | 200mm2 | 23,500,000 | |
| Vega 20 GCN5 | 13,230,000,000 | 2018 | AMD | TSMC | 7 nm | 331mm2 | 39,970,000 | |
| Navi 10 RDNA | 10,300,000,000 | 2019 | AMD | TSMC | 7nm | 251mm2 | 41,040,000 | |
| Navi 12 RDNA | ? | 2020 | AMD | TSMC | 7nm | ? | ? | |
| Navi 14 RDNA | 6,400,000,000 | 2019 | AMD | TSMC | 7nm | 158mm2 | 40,510,000 | |
| Arcturus CDNA | 25,600,000,000 | 2020 | AMD | TSMC | 7nm | 750mm2 | 34,100,000 | |
| GA100 Ampere | 54,200,000,000 | 2020 | Nvidia | TSMC | 7nm | 826mm2 | 65,620,000 | |
| GA102 Ampere | 28,300,000,000 | 2020 | Nvidia | Samsung | 8nm | 628mm2 | 45,035,000 | |
| GA103 Ampere | 22,000,000,000 | 2022 | Nvidia | Samsung | 8nm | 496mm2 | 44,400,000 | |
| GA104 Ampere | 17,400,000,000 | 2020 | Nvidia | Samsung | 8nm | 392mm2 | 44,390,000 | |
| GA106 Ampere | 12,000,000,000 | 2021 | Nvidia | Samsung | 8nm | 276mm2 | 43,480,000 | |
| GA107 Ampere | 8,700,000,000 | 2021 | Nvidia | Samsung | 8nm | 200mm2 | 43,500,000 | |
| Navi 21 RDNA2 | 26,800,000,000 | 2020 | AMD | TSMC | 7nm | 520mm2 | 51,540,000 | |
| Navi 22 RDNA2 | 17,200,000,000 | 2021 | AMD | TSMC | 7nm | 335mm2 | 51,340,000 | |
| Navi 23 RDNA2 | 11,060,000,000 | 2021 | AMD | TSMC | 7nm | 237mm2 | 46,670,000 | |
| Navi 24 RDNA2 | 5,400,000,000 | 2022 | AMD | TSMC | 6nm | 107mm2 | 50,470,000 | |
| Aldebaran CDNA2 | 58,200,000,000 (MCM) | 2021 | AMD | TSMC | 6nm | 1448–1474mm2 1480mm2 1490–1580mm2 | 39,500,000–40,200,000 39,200,000 36,800,000–39,100,000 | |
| GH100 Hopper | 80,000,000,000 | 2022 | Nvidia | TSMC | 4nm | 814mm2 | 98,280,000 | |
| AD102 Ada Lovelace | 76,300,000,000 | 2022 | Nvidia | TSMC | 4nm | 608.4mm2 | 125,411,000 | |
| AD103 Ada Lovelace | 45,900,000,000 | 2022 | Nvidia | TSMC | 4nm | 378.6mm2 | 121,240,000 | |
| AD104 Ada Lovelace | 35,800,000,000 | 2022 | Nvidia | TSMC | 4nm | 294.5mm2 | 121,560,000 | |
| AD106 Ada Lovelace | ? | 2023 | Nvidia | TSMC | 4nm | 190mm2 | ? | |
| AD107 Ada Lovelace | ? | 2023 | Nvidia | TSMC | 4nm | 146mm2 | ? | |
| Navi 31 RDNA3 | 57,700,000,000(MCM) 45,400,000,000(GCD) 6×2,050,000,000(MCD) | 2022 | AMD | TSMC | 5nm(GCD) 6nm(MCD) | 531mm2(MCM) 306mm2(GCD) 6×37.5mm2(MCD) | 109,200,000(MCM) 132,400,000(GCD) 54,640,000(MCD) | |
| Navi 32 RDNA3 | 28,100,000,000(MCM) | 2023 | AMD | TSMC | 5nm(GCD) 6nm(MCD) | 350mm2(MCM) 200mm2(GCD) 4×37.5mm2(MCD) | 80,200,000(MCM) | |
| Navi 33 RDNA3 | 13,300,000,000 | 2023 | AMD | TSMC | 6nm | 204mm2 | 65,200,000 | |
| Aqua Vanjaram CDNA3 | 153,000,000,000 (MCM) | 2023 | AMD | TSMC | 5nm(GCD) 6nm(MCD) | ? | ? | |
| GB200 Grace Blackwell | 208,000,000,000 (MCM) | 2024 | Nvidia | TSMC | 4nm | ? | ? | |
| GB202 Blackwell | 92,200,000,000 | 2025 | Nvidia | TSMC | 4nm | 750mm2 | 122,600,000 | |
| GB203 Blackwell | 45,600,000,000 | 2025 | Nvidia | TSMC | 4nm | 378mm2 | 120,600,000 | |
| GB205 Blackwell | 31,100,000,000 | 2025 | Nvidia | TSMC | 4nm | 263mm2 | 118,300,000 | |
| GB206 Blackwell | 21,900,000,000 | 2025 | Nvidia | TSMC | 4nm | 181mm2 | 121,000,000 | |
| GB207 Blackwell | 16,900,000,000 | 2025 | Nvidia | TSMC | 4nm | 149mm2 | 113,400,000 | |
| Navi 44 RDNA4 | 29,700,000,000 | 2025 | AMD | TSMC | 4nm | 199mm2 | 149,200,000 | |
| Navi 48 RDNA4 | 53,900,000,000 | 2025 | AMD | TSMC | 4nm | 357mm2 | 151,000,000 | |
| GR200 Rubin | 336,000,000,000 (MCM) | 2026 | Nvidia | TSMC | 3nm | ? | ? | |
| Processor | Transistor count | Year | Designer(s) | Fab(s) | MOS process | Area | Transistor density (tr./mm2) | Ref |
FPGA
A field-programmable gate array (FPGA) is an integrated circuit designed to be configured by a customer or a designer after manufacturing.
| FPGA | Transistor count | Date of introduction | Designer | Manufacturer | Process | Area | Transistor density, tr./mm2 | Ref |
|---|---|---|---|---|---|---|---|---|
| Virtex | 70,000,000 | 1997 | Xilinx | |||||
| Virtex-E | 200,000,000 | 1998 | Xilinx | |||||
| Virtex-II | 350,000,000 | 2000 | Xilinx | 130nm | ||||
| Virtex-II PRO | 430,000,000 | 2002 | Xilinx | |||||
| Virtex-4 | 1,000,000,000 | 2004 | Xilinx | 90nm | ||||
| Virtex-5 | 1,100,000,000 | 2006 | Xilinx | TSMC | 65nm | |||
| Stratix IV | 2,500,000,000 | 2008 | Altera | TSMC | 40nm | |||
| Stratix V | 3,800,000,000 | 2011 | Altera | TSMC | 28nm | [citation needed] | ||
| Arria 10 | 5,300,000,000 | 2014 | Altera | TSMC | 20nm | |||
| Virtex-7 2000T | 6,800,000,000 | 2011 | Xilinx | TSMC | 28nm | |||
| Stratix 10 SX 2800 | 17,000,000,000 | TBD | Intel | Intel | 14nm | 560mm2 | 30,400,000 | |
| Virtex-Ultrascale VU440 | 20,000,000,000 | Q1 2015 | Xilinx | TSMC | 20nm | |||
| Virtex-Ultrascale+ VU19P | 35,000,000,000 | 2020 | Xilinx | TSMC | 16nm | 900mm2 | 38,900,000 | |
| Versal VC1902 | 37,000,000,000 | 2H 2019 | Xilinx | TSMC | 7nm | |||
| Stratix 10 GX 10M | 43,300,000,000 | Q4 2019 | Intel | Intel | 14nm | 1,400mm2 | 30,930,000 | |
| Versal VP1802 | 92,000,000,000 | 2021 ? | Xilinx | TSMC | 7nm |
Memory
Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on integrated circuits. Nearly all semiconductor memories since the 1970s have used MOSFETs (MOS transistors), replacing earlier bipolar junction transistors. There are two major types of semiconductor memory: random-access memory (RAM) and non-volatile memory (NVM). In turn, there are two major RAM types: dynamic random-access memory (DRAM) and static random-access memory (SRAM), as well as two major NVM types: flash memory and read-only memory (ROM).
Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is common. Capacitor charged or not[clarification needed] is used to store 1 or 0. In flash memory, the data is stored in floating gates, and the resistance of the transistor is sensed[clarification needed] to interpret the data stored. Depending on how fine scale the resistance could be separated[clarification needed], one transistor could store up to three bits, meaning eight distinctive levels of resistance possible per transistor. However, a finer scale comes with the cost of repeatability issues, and hence reliability. Typically, low grade 2-bits MLC flash is used for flash drives, so a 16GB flash drive contains roughly 64 billion transistors.
For SRAM chips, six-transistor cells (six transistors per bit) was the standard. DRAM chips during the early 1970s had three-transistor cells (three transistors per bit), before single-transistor cells (one transistor per bit) became standard since the era of 4Kb DRAM in the mid-1970s. In single-level flash memory, each cell contains one floating-gate MOSFET (one transistor per bit), whereas multi-level flash contains 2, 3 or 4 bits per transistor.
Flash memory chips are commonly stacked up in layers, up to 128-layer in production, and 136-layer managed, and available in end-user devices up to 69-layer from manufacturers.
| Chip name | Capacity (bits) | RAM type | Transistor count | Date of introduction | Manufacturer(s) | Process | Area | Transistor density (tr./mm2) | Ref |
|---|---|---|---|---|---|---|---|---|---|
| —N/a | 1-bit | SRAM (cell) | 6 | 1963 | Fairchild | —N/a | —N/a | ? | |
| —N/a | 1-bit | DRAM (cell) | 1 | 1965 | Toshiba | —N/a | —N/a | ? | |
| ? | 8-bit | SRAM (bipolar) | 48 | 1965 | SDS, Signetics | ? | ? | ? | |
| SP95 | 16-bit | SRAM (bipolar) | 80 | 1965 | IBM | ? | ? | ? | |
| TMC3162 | 16-bit | SRAM (TTL) | 96 | 1966 | Transitron | —N/a | ? | ? | |
| ? | ? | SRAM (MOS) | ? | 1966 | NEC | ? | ? | ? | |
| 256-bit | DRAM (IC) | 256 | 1968 | Fairchild | ? | ? | ? | ||
| 64-bit | SRAM (PMOS) | 384 | 1968 | Fairchild | ? | ? | ? | ||
| 144-bit | SRAM (NMOS) | 864 | 1968 | NEC | |||||
| 1101 | 256-bit | SRAM (PMOS) | 1,536 | 1969 | Intel | 12,000nm | ? | ? | |
| 1102 | 1 Kb | DRAM (PMOS) | 3,072 | 1970 | Intel, Honeywell | ? | ? | ? | |
| 1103 | 1Kb | DRAM (PMOS) | 3,072 | 1970 | Intel | 8,000 nm | 10mm2 | 307 | |
| μPD403 | 1Kb | DRAM (NMOS) | 3,072 | 1971 | NEC | ? | ? | ? | |
| ? | 2Kb | DRAM (PMOS) | 6,144 | 1971 | General Instrument | ? | 12.7mm2 | 484 | |
| 2102 | 1Kb | SRAM (NMOS) | 6,144 | 1972 | Intel | ? | ? | ? | |
| ? | 8Kb | DRAM (PMOS) | 8,192 | 1973 | IBM | ? | 18.8mm2 | 436 | |
| 5101 | 1Kb | SRAM (CMOS) | 6,144 | 1974 | Intel | ? | ? | ? | |
| 2116 | 16Kb | DRAM (NMOS) | 16,384 | 1975 | Intel | ? | ? | ? | |
| 2114 | 4Kb | SRAM (NMOS) | 24,576 | 1976 | Intel | ? | ? | ? | |
| ? | 4Kb | SRAM (CMOS) | 24,576 | 1977 | Toshiba | ? | ? | ? | |
| 64Kb | DRAM (NMOS) | 65,536 | 1977 | NTT | ? | 35.4mm2 | 1851 | ||
| DRAM (VMOS) | 65,536 | 1979 | Siemens | ? | 25.2mm2 | 2601 | |||
| 16Kb | SRAM (CMOS) | 98,304 | 1980 | Hitachi, Toshiba | ? | ? | ? | ||
| 256Kb | DRAM (NMOS) | 262,144 | 1980 | NEC | 1,500nm | 41.6mm2 | 6302 | ||
| NTT | 1,000nm | 34.4mm2 | 7620 | ||||||
| 64Kb | SRAM (CMOS) | 393,216 | 1980 | Matsushita | ? | ? | ? | ||
| 288Kb | DRAM | 294,912 | 1981 | IBM | ? | 25mm2 | 11,800 | ||
| 64Kb | SRAM (NMOS) | 393,216 | 1982 | Intel | 1,500nm | ? | ? | ||
| 256Kb | SRAM (CMOS) | 1,572,864 | 1984 | Toshiba | 1,200nm | ? | ? | ||
| 8 Mb | DRAM | 8,388,608 | January 5, 1984 | Hitachi | ? | ? | ? | ||
| 16Mb | DRAM (CMOS) | 16,777,216 | 1987 | NTT | 700nm | 148mm2 | 113,400 | ||
| 4Mb | SRAM (CMOS) | 25,165,824 | 1990 | NEC, Toshiba, Hitachi, Mitsubishi | ? | ? | ? | ||
| 64Mb | DRAM (CMOS) | 67,108,864 | 1991 | Matsushita, Mitsubishi, Fujitsu, Toshiba | 400nm | ||||
| KM48SL2000 | 16Mb | SDRAM | 16,777,216 | 1992 | Samsung | ? | ? | ? | |
| ? | 16Mb | SRAM (CMOS) | 100,663,296 | 1992 | Fujitsu, NEC | 400nm | ? | ? | |
| 256Mb | DRAM (CMOS) | 268,435,456 | 1993 | Hitachi, NEC | 250nm | ||||
| 1 Gb | DRAM | 1,073,741,824 | January 9, 1995 | NEC | 250nm | ? | ? | ||
| Hitachi | 160nm | ? | ? | ||||||
| SDRAM | 1,073,741,824 | 1996 | Mitsubishi | 150nm | ? | ? | |||
| SDRAM (SOI) | 1,073,741,824 | 1997 | Hyundai | ? | ? | ? | |||
| 4Gb | DRAM (4-bit) | 1,073,741,824 | 1997 | NEC | 150nm | ? | ? | ||
| DRAM | 4,294,967,296 | 1998 | Hyundai | ? | ? | ? | |||
| 8Gb | SDRAM (DDR3) | 8,589,934,592 | April 2008 | Samsung | 50nm | ? | ? | ||
| 16Gb | SDRAM (DDR3) | 17,179,869,184 | 2008 | ||||||
| 32Gb | SDRAM (HBM2) | 34,359,738,368 | 2016 | Samsung | 20nm | ? | ? | ||
| 64Gb | SDRAM (HBM2) | 68,719,476,736 | 2017 | ||||||
| 128Gb | SDRAM (DDR4) | 137,438,953,472 | 2018 | Samsung | 10nm | ? | ? | ||
| ? | RRAM (3DSoC) | ? | 2019 | SkyWater Technology | 90nm | ? | ? |
| Chip name | Capacity (bits) | Flash type | FGMOS transistor count | Date of introduction | Manufacturer(s) | Process | Area | Transistor density (tr./mm2) | Ref |
|---|---|---|---|---|---|---|---|---|---|
| ? | 256 Kb | NOR | 262,144 | 1985 | Toshiba | 2,000nm | ? | ? | |
| 1 Mb | NOR | 1,048,576 | 1989 | Seeq, Intel | ? | ||||
| 4Mb | NAND | 4,194,304 | 1989 | Toshiba | 1,000nm | ||||
| 16Mb | NOR | 16,777,216 | 1991 | Mitsubishi | 600nm | ||||
| DD28F032SA | 32Mb | NOR | 33,554,432 | 1993 | Intel | ? | 280mm2 | 120,000 | |
| ? | 64Mb | NOR | 67,108,864 | 1994 | NEC | 400nm | ? | ? | |
| NAND | 67,108,864 | 1996 | Hitachi | ||||||
| 128Mb | NAND | 134,217,728 | 1996 | Samsung, Hitachi | ? | ||||
| 256Mb | NAND | 268,435,456 | 1999 | Hitachi, Toshiba | 250nm | ||||
| 512Mb | NAND | 536,870,912 | 2000 | Toshiba | ? | ? | ? | ||
| 1 Gb | 2-bit NAND | 536,870,912 | 2001 | Samsung | ? | ? | ? | ||
| Toshiba, SanDisk | 160nm | ? | ? | ||||||
| 2Gb | NAND | 2,147,483,648 | 2002 | Samsung, Toshiba | ? | ? | ? | ||
| 8Gb | NAND | 8,589,934,592 | 2004 | Samsung | 60nm | ? | ? | ||
| 16Gb | NAND | 17,179,869,184 | 2005 | Samsung | 50nm | ? | ? | ||
| 32Gb | NAND | 34,359,738,368 | 2006 | Samsung | 40nm | ||||
| THGAM | 128Gb | Stacked NAND | 128,000,000,000 | April 2007 | Toshiba | 56nm | 252mm2 | 507,900,000 | |
| THGBM | 256Gb | Stacked NAND | 256,000,000,000 | 2008 | Toshiba | 43nm | 353mm2 | 725,200,000 | |
| THGBM2 | 1 Tb | Stacked 4-bit NAND | 256,000,000,000 | 2010 | Toshiba | 32nm | 374mm2 | 684,500,000 | |
| KLMCG8GE4A | 512Gb | Stacked 2-bit NAND | 256,000,000,000 | 2011 | Samsung | ? | 192mm2 | 1,333,000,000 | |
| KLUFG8R1EM | 4Tb | Stacked 3-bit V-NAND | 1,365,333,333,504 | 2017 | Samsung | ? | 150mm2 | 9,102,000,000 | |
| eUFS (1TB) | 8Tb | Stacked 4-bit V-NAND | 2,048,000,000,000 | 2019 | Samsung | ? | 150mm2 | 13,650,000,000 | |
| ? | 1 Tb | 232L TLC NAND die | 333,333,333,333 | 2022 | Micron | ? | 68.5mm2 (memory array) | 4,870,000,000 (14.6 Gbit/mm2) | |
| ? | 16 Tb | 232L package | 5,333,333,333,333 | 2022 | Micron | ? | 68.5mm2 (memory array) | 77,900,000,000 (16×14.6 Gbit/mm2) |
| Chip name | Capacity (bits) | ROM type | Transistor count | Date of introduction | Manufacturer(s) | Process | Area | Ref |
|---|---|---|---|---|---|---|---|---|
| ? | ? | PROM | ? | 1956 | Arma | —N/a | ? | |
| 1 Kb | ROM (MOS) | 1,024 | 1965 | General Microelectronics | ? | ? | ||
| 3301 | 1Kb | ROM (bipolar) | 1,024 | 1969 | Intel | —N/a | ? | |
| 1702 | 2Kb | EPROM (MOS) | 2,048 | 1971 | Intel | ? | 15mm2 | |
| ? | 4Kb | ROM (MOS) | 4,096 | 1974 | AMD, General Instrument | ? | ? | |
| 2708 | 8Kb | EPROM (MOS) | 8,192 | 1975 | Intel | ? | ? | |
| ? | 2Kb | EEPROM (MOS) | 2,048 | 1976 | Toshiba | ? | ? | |
| μCOM-43 ROM | 16Kb | PROM (PMOS) | 16,000 | 1977 | NEC | ? | ? | |
| 2716 | 16Kb | EPROM (TTL) | 16,384 | 1977 | Intel | —N/a | ? | |
| EA8316F | 16Kb | ROM (NMOS) | 16,384 | 1978 | Electronic Arrays | ? | 436mm2 | |
| 2732 | 32Kb | EPROM | 32,768 | 1978 | Intel | ? | ? | |
| 2364 | 64Kb | ROM | 65,536 | 1978 | Intel | ? | ? | |
| 2764 | 64Kb | EPROM | 65,536 | 1981 | Intel | 3,500 nm | ? | |
| 27128 | 128Kb | EPROM | 131,072 | 1982 | Intel | ? | ||
| 27256 | 256Kb | EPROM (HMOS) | 262,144 | 1983 | Intel | ? | ? | |
| ? | 256Kb | EPROM (CMOS) | 262,144 | 1983 | Fujitsu | ? | ? | |
| 512Kb | EPROM (NMOS) | 524,288 | 1984 | AMD | 1,700nm | ? | ||
| 27512 | 512Kb | EPROM (HMOS) | 524,288 | 1984 | Intel | ? | ? | |
| ? | 1 Mb | EPROM (CMOS) | 1,048,576 | 1984 | NEC | 1,200nm | ? | |
| 4Mb | EPROM (CMOS) | 4,194,304 | 1987 | Toshiba | 800nm | |||
| 16Mb | EPROM (CMOS) | 16,777,216 | 1990 | NEC | 600nm | |||
| MROM | 16,777,216 | 1995 | AKM, Hitachi | ? | ? |
Transistor computers

Before transistors were invented, relays were used in commercial tabulating machines and experimental early computers. The world's first working programmable, fully automatic digital computer, the 1941 Z3 22-bit word length computer, had 2,600 relays, and operated at a clock frequency of about 4–5Hz. The 1940 Complex Number Computer had fewer than 500 relays, but it was not fully programmable. The earliest practical computers used vacuum tubes and solid-state diode logic. ENIAC had 18,000 vacuum tubes, 7,200 crystal diodes, and 1,500 relays, with many of the vacuum tubes containing two triode elements.
The second generation of computers were transistor computers that featured boards filled with discrete transistors, solid-state diodes and magnetic memory cores. The experimental 1953 48-bit Transistor Computer, developed at the University of Manchester, is widely believed to be the first transistor computer to come into operation anywhere in the world (the prototype had 92 point-contact transistors and 550 diodes). A later version the 1955 machine had a total of 250 junction transistors and 1,300 point-contact diodes. The Computer also used a small number of tubes in its clock generator, so it was not the first fully transistorized. The ETL Mark III, developed at the Electrotechnical Laboratory in 1956, may have been the first transistor-based electronic computer using the stored program method. It had about "130 point-contact transistors and about 1,800 germanium diodes were used for logic elements, and these were housed on 300 plug-in packages which could be slipped in and out." The 1958 decimal architecture IBM 7070 was the first transistor computer to be fully programmable. It had about 30,000 alloy-junction germanium transistors and 22,000 germanium diodes, on approximately 14,000 Standard Modular System (SMS) cards. The 1959 MOBIDIC, short for "MOBIle DIgital Computer", at 12,000 pounds (6.0 short tons) mounted in the trailer of a semi-trailer truck, was a transistorized computer for battlefield data.
The third generation of computers used integrated circuits (ICs). The 1962 15-bit Apollo Guidance Computer used "about 4,000 "Type-G" (3-input NOR gate) circuits" for about 12,000 transistors plus 32,000 resistors. The IBM System/360, introduced 1964, used discrete transistors in hybrid circuit packs. The 1965 12-bit PDP-8 CPU had 1409 discrete transistors and over 10,000 diodes, on many cards. Later versions, starting with the 1968 PDP-8/I, used integrated circuits. The PDP-8 was later reimplemented as a microprocessor as the Intersil 6100, see below.
The next generation of computers were the microcomputers, starting with the 1971 Intel 4004, which used MOS transistors. These were used in home computers or personal computers (PCs).
This list includes early transistorized computers (second generation) and IC-based computers (third generation) from the 1950s and 1960s.
| Computer | Transistor count | Year | Manufacturer | Notes | Ref |
|---|---|---|---|---|---|
| Transistor Computer | 92 | 1953 | University of Manchester | Point-contact transistors, 550 diodes. Lacked stored program capability. | |
| TRADIC | 700 | 1954 | Bell Labs | Point-contact transistors | |
| Transistor Computer (full size) | 250 | 1955 | University of Manchester | Discrete point-contact transistors, 1,300 diodes | |
| IBM 608 | 3,000 | 1955 | IBM | Germanium transistors | |
| ETL Mark III | 130 | 1956 | Electrotechnical Laboratory | Point-contact transistors, 1,800 diodes, stored program capability | |
| Metrovick 950 | 200 | 1956 | Metropolitan-Vickers | Discrete junction transistors | |
| NEC NEAC-2201 | 600 | 1958 | NEC | Germanium transistors | |
| Hitachi MARS-1 | 1,000 | 1958 | Hitachi | ||
| IBM 7070 | 30,000 | 1958 | IBM | Alloy-junction germanium transistors, 22,000 diodes | |
| Matsushita MADIC-I | 400 | 1959 | Matsushita | Bipolar transistors | |
| NEC NEAC-2203 | 2,579 | 1959 | NEC | ||
| Toshiba TOSBAC-2100 | 5,000 | 1959 | Toshiba | ||
| IBM 7090 | 50,000 | 1959 | IBM | Discrete germanium transistors | |
| PDP-1 | 2,700 | 1959 | Digital Equipment Corporation | Discrete transistors | |
| Olivetti Elea 9003 | ? | 1959 | Olivetti | 300,000 (?) discrete transistors and diodes | |
| Mitsubishi MELCOM 1101 | 3,500 | 1960 | Mitsubishi | Germanium transistors | |
| M18 FADAC | 1,600 | 1960 | Autonetics | Discrete transistors | |
| CPU of IBM 7030 Stretch | 169,100 | 1961 | IBM | World's fastest computer from 1961 to 1964 | |
| D-17B | 1,521 | 1962 | Autonetics | Discrete transistors | |
| NEC NEAC-L2 | 16,000 | 1964 | NEC | Ge transistors | |
| CDC 6600 (entire computer) | 400,000 | 1964 | Control Data Corporation | World's fastest computer from 1964 to 1969 | |
| IBM System/360 | ? | 1964 | IBM | Hybrid circuits | |
| PDP-8 "Straight-8" | 1,409 | 1965 | Digital Equipment Corporation | discrete transistors, 10,000 diodes | |
| PDP-8/S | 1,001 | 1966 | Digital Equipment Corporation | discrete transistors, diodes | |
| PDP-8/I | 1,409[citation needed] | 1968 | Digital Equipment Corporation | 74 series TTL circuits | |
| Apollo Guidance Computer Block I | 12,300 | 1966 | Raytheon / MIT Instrumentation Laboratory | 4,100 ICs, each containing a 3-transistor, 3-input NOR gate. (Block II had 2,800 dual 3-input NOR gates ICs.) |
Logic functions
Transistor count for generic logic functions is based on static CMOS implementation.
| Function | Transistor count | Ref. |
|---|---|---|
| NOT | 2 | |
| Buffer | 4 | |
| NAND 2-input | 4 | |
| NOR 2-input | 4 | |
| AND 2-input | 6 | |
| OR 2-input | 6 | |
| NAND 3-input | 6 | |
| NOR 3-input | 6 | |
| XOR 2-input | 6 | |
| XNOR 2-input | 8 | |
| MUX 2-input with TG | 6 | |
| MUX 4-input with TG | 18 | |
| NOT MUX 2-input | 8 | |
| MUX 4-input | 24 | |
| 1-bit full adder | 24 | |
| 1-bit adder–subtractor | 48 | |
| AND-OR-INVERT | 6 | |
| Latch, D gated | 8 | |
| Flip-flop, edge triggered dynamic D with reset | 12 | |
| 8-bit multiplier | 3,000 | |
| 16-bit multiplier | 9,000 | |
| 32-bit multiplier | 21,000 | [citation needed] |
| small-scale integration | 2–100 | |
| medium-scale integration | 100–500 | |
| large-scale integration | 500–20,000 | |
| very-large-scale integration | 20,000–1,000,000 | |
| ultra-large scale integration | >1,000,000 |
Parallel systems
Historically, each processing element in earlier parallel systems—like all CPUs of that time—was a serial computer built out of multiple chips. As transistor counts per chip increases, each processing element could be built out of fewer chips, and then later each multi-core processor chip could contain more processing elements.
Goodyear MPP: (1983?) 8 pixel processors per chip, 3,000 to 8,000 transistors per chip.
Brunel University Scape (single-chip array-processing element): (1983) 256 pixel processors per chip, 120,000 to 140,000 transistors per chip.
Cell Broadband Engine: (2006) with 9 cores per chip, had 234 million transistors per chip.
Other devices
| Device type | Device name | Transistor count | Date of introduction | Designer(s) | Manufacturer(s) | MOS process | Area | Transistor density, tr./mm2 | Ref |
|---|---|---|---|---|---|---|---|---|---|
| Deep learning engine / IPU | Colossus GC2 | 23,600,000,000 | 2018 | Graphcore | TSMC | 16nm | ~800mm2 | 29,500,000 | [bettersourceneeded] |
| Deep learning engine / IPU | Wafer Scale Engine | 1,200,000,000,000 | 2019 | Cerebras | TSMC | 16nm | 46,225mm2 | 25,960,000 | |
| Deep learning engine / IPU | Wafer Scale Engine 2 | 2,600,000,000,000 | 2020 | Cerebras | TSMC | 7nm | 46,225mm2 | 56,250,000 | |
| Network switch | NVLink4 NVSwitch | 25,100,000,000 | 2022 | Nvidia | TSMC | N4 (4nm) | 294mm2 | 85,370,000 |
Transistor density
The transistor density is the number of transistors that are fabricated per unit area, typically measured in terms of the number of transistors per square millimeter (mm2). The transistor density usually correlates with the gate length of a semiconductor node (also known as a semiconductor manufacturing process), typically measured in nanometers (nm). As of 2019[update], the semiconductor node with the highest transistor density is TSMC's 5 nanometer node, with 171.3million transistors per square millimeter (note this corresponds to a transistor-transistor spacing of 76.4nm, far greater than the relative meaningless "5nm")
MOSFET nodes
| Node name | Transistor density (transistors/mm2) | Production year | Process | MOSFET | Manufacturer(s) | Ref |
|---|---|---|---|---|---|---|
| ? | ? | 1960 | 20,000 nm | PMOS | Bell Labs | |
| ? | ? | 1960 | 20,000nm | NMOS | ||
| ? | ? | 1963 | ? | CMOS | Fairchild | |
| ? | ? | 1964 | ? | PMOS | General Microelectronics | |
| ? | ? | 1968 | 20,000nm | CMOS | RCA | |
| ? | ? | 1969 | 12,000nm | PMOS | Intel | |
| ? | ? | 1970 | 10,000nm | CMOS | RCA | |
| ? | 300 | 1970 | 8,000nm | PMOS | Intel | |
| ? | ? | 1971 | 10,000nm | PMOS | Intel | |
| ? | 480 | 1971 | ? | PMOS | General Instrument | |
| ? | ? | 1973 | ? | NMOS | Texas Instruments | |
| ? | 220 | 1973 | ? | NMOS | Mostek | |
| ? | ? | 1973 | 7,500nm | NMOS | NEC | |
| ? | ? | 1973 | 6,000nm | PMOS | Toshiba | |
| ? | ? | 1976 | 5,000nm | NMOS | Hitachi, Intel | |
| ? | ? | 1976 | 5,000nm | CMOS | RCA | |
| ? | ? | 1976 | 4,000nm | NMOS | Zilog | |
| ? | ? | 1976 | 3,000nm | NMOS | Intel | |
| ? | 1,850 | 1977 | ? | NMOS | NTT | |
| ? | ? | 1978 | 3,000nm | CMOS | Hitachi | |
| ? | ? | 1978 | 2,500nm | NMOS | Texas Instruments | |
| ? | ? | 1978 | 2,000nm | NMOS | NEC, NTT | |
| ? | 2,600 | 1979 | ? | VMOS | Siemens | |
| ? | 7,280 | 1979 | 1,000nm | NMOS | NTT | |
| ? | 7,620 | 1980 | 1,000nm | NMOS | NTT | |
| ? | ? | 1983 | 2,000nm | CMOS | Toshiba | |
| ? | ? | 1983 | 1,500nm | CMOS | Intel | |
| ? | ? | 1983 | 1,200nm | CMOS | Intel | |
| ? | ? | 1984 | 800 nm | CMOS | NTT | |
| ? | ? | 1987 | 700nm | CMOS | Fujitsu | |
| ? | ? | 1989 | 600 nm | CMOS | Mitsubishi, NEC, Toshiba | |
| ? | ? | 1989 | 500 nm | CMOS | Hitachi, Mitsubishi, NEC, Toshiba | |
| ? | ? | 1991 | 400nm | CMOS | Matsushita, Mitsubishi, Fujitsu, Toshiba | |
| ? | ? | 1993 | 350 nm | CMOS | Sony | |
| ? | ? | 1993 | 250 nm | CMOS | Hitachi, NEC | |
| 3LM | 32,000 | 1994 | 350nm | CMOS | NEC | |
| ? | ? | 1995 | 160nm | CMOS | Hitachi | |
| ? | ? | 1996 | 150nm | CMOS | Mitsubishi | |
| TSMC 180nm | ? | 1998 | 180 nm | CMOS | TSMC | |
| CS80 | ? | 1999 | 180nm | CMOS | Fujitsu | |
| ? | ? | 1999 | 180 nm | CMOS | Intel, Sony, Toshiba | |
| CS85 | ? | 1999 | 170nm | CMOS | Fujitsu | |
| Samsung 140nm | ? | 1999 | 140nm | CMOS | Samsung | |
| ? | ? | 2001 | 130 nm | CMOS | Fujitsu, Intel | |
| Samsung 100nm | ? | 2001 | 100nm | CMOS | Samsung | |
| ? | ? | 2002 | 90 nm | CMOS | Sony, Toshiba, Samsung | |
| CS100 | ? | 2003 | 90nm | CMOS | Fujitsu | |
| Intel 90nm | 1,450,000 | 2004 | 90nm | CMOS | Intel | |
| Samsung 80nm | ? | 2004 | 80nm | CMOS | Samsung | |
| ? | ? | 2004 | 65 nm | CMOS | Fujitsu, Toshiba | |
| Samsung 60nm | ? | 2004 | 60nm | CMOS | Samsung | |
| TSMC 45nm | ? | 2004 | 45 nm | CMOS | TSMC | |
| Elpida 90nm | ? | 2005 | 90nm | CMOS | Elpida Memory | |
| CS200 | ? | 2005 | 65nm | CMOS | Fujitsu | |
| Samsung 50nm | ? | 2005 | 50nm | CMOS | Samsung | |
| Intel 65nm | 2,080,000 | 2006 | 65nm | CMOS | Intel | |
| Samsung 40nm | ? | 2006 | 40 nm | CMOS | Samsung | |
| Toshiba 56nm | ? | 2007 | 56nm | CMOS | Toshiba | |
| Matsushita 45nm | ? | 2007 | 45nm | CMOS | Matsushita | |
| Intel 45nm | 3,300,000 | 2008 | 45nm | CMOS | Intel | |
| Toshiba 43nm | ? | 2008 | 43nm | CMOS | Toshiba | |
| TSMC 40nm | ? | 2008 | 40nm | CMOS | TSMC | |
| Toshiba 32nm | ? | 2009 | 32 nm | CMOS | Toshiba | |
| Intel 32nm | 7,500,000 | 2010 | 32nm | CMOS | Intel | |
| ? | ? | 2010 | 20 nm | CMOS | Hynix, Samsung | |
| Intel 22nm | 15,300,000 | 2012 | 22 nm | CMOS | Intel | |
| IMFT 20nm | ? | 2012 | 20nm | CMOS | IMFT | |
| Toshiba 19nm | ? | 2012 | 19nm | CMOS | Toshiba | |
| Hynix 16nm | ? | 2013 | 16 nm | FinFET | SK Hynix | |
| TSMC 16nm | 28,880,000 | 2013 | 16nm | FinFET | TSMC | |
| Samsung 10nm | 51,820,000 | 2013 | 10 nm | FinFET | Samsung | |
| Intel 14nm | 37,500,000 | 2014 | 14 nm | FinFET | Intel | |
| 14LP | 32,940,000 | 2015 | 14nm | FinFET | Samsung | |
| TSMC 10nm | 52,510,000 | 2016 | 10nm | FinFET | TSMC | |
| 12LP | 36,710,000 | 2017 | 12 nm | FinFET | GlobalFoundries, Samsung | |
| N7FF | 96,500,000 101,850,000 | 2017 | 7 nm | FinFET | TSMC | |
| 8LPP | 61,180,000 | 2018 | 8nm | FinFET | Samsung | |
| 7LPE | 95,300,000 | 2018 | 7nm | FinFET | Samsung | |
| Intel 10nm | 100,760,000 106,100,000 | 2018 | 10nm | FinFET | Intel | |
| 5LPE | 126,530,000 133,560,000 134,900,000 | 2018 | 5 nm | FinFET | Samsung | |
| N7FF+ | 113,900,000 | 2019 | 7nm | FinFET | TSMC | |
| CLN5FF | 171,300,000 185,460,000 | 2019 | 5nm | FinFET | TSMC | |
| Intel 7 | 100,760,000 106,100,000 | 2021 | 7nm | FinFET | Intel | |
| 4LPE | 145,700,000 | 2021 | 4nm | FinFET | Samsung | |
| N4 | 196,600,000 | 2021 | 4nm | FinFET | TSMC | |
| N4P | 196,600,000 | 2022 | 4nm | FinFET | TSMC | |
| 3GAE | 202,850,000 | 2022 | 3nm | MBCFET | Samsung | |
| N3 | 314,730,000 | 2022 | 3nm | FinFET | TSMC | |
| N4X | ? | 2023 | 4nm | FinFET | TSMC | |
| N3E | ? | 2023 | 3nm | FinFET | TSMC | |
| 3GAP | ? | 2023 | 3nm | MBCFET | Samsung | |
| Intel 4 | 160,000,000 | 2023 | 4nm | FinFET | Intel | |
| Intel 3 | ? | 2023 | 3nm | FinFET | Intel | |
| Intel 20A | ? | 2024 | 2nm | RibbonFET | Intel | |
| Intel 18A | 238,000,000 | 2025 | sub-2nm | RibbonFET | Intel | |
| 2GAP | ? | 2025 | 2nm | MBCFET | Samsung | |
| N2 | ? | 2025 | 2nm | GAAFET | TSMC | |
| Samsung 1.4nm | ? | 2027 | 1.4nm | ? | Samsung |
Gate count
In certain applications, the term gate count is preferred over the term transistor count. It refers to the number of logic gates built with transistors and other electronic devices needed to implement a design.
See also
- Dennard scaling
- Electronics industry
- Integrated circuit
- List of semiconductor scale examples
- MOSFET
- Semiconductor device
- Semiconductor device fabrication
- Semiconductor industry
- Cerebras Systems