The transistor count is the number of transistors in an electronic device (typically on a single substrate or silicon die). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a die, transistor count does not represent how advanced the corresponding manufacturing technology is. A better indication of this is transistor density which is the ratio of a device's transistor count to its die area.

Records

As of 2023[update], the highest transistor count in flash memory is Micron's 2terabyte (3D-stacked) 16-die, 232-layer V-NAND flash memory chip, with 5.3trillion floating-gate MOSFETs (3bits per transistor).

The highest transistor count in a single chip processor as of 2020[update] is that of the deep learning processor Wafer Scale Engine 2 by Cerebras. It has 2.6trillion MOSFETs in 84 exposed fields (dies) on a wafer, manufactured using TSMC's 7 nm FinFET process.

As of 2026[update], the GPU with the highest transistor count is Nvidia's Rubin accelerator, built on TSMC's custom N3P process node and totaling 336 billion MOSFETs.

The highest transistor count in a consumer microprocessor as of March2025[update] is 184billion transistors, in Apple's ARM-based dual-die M3 Ultra SoC, which is fabricated using TSMC's 3 nm semiconductor manufacturing process.[citation needed]

YearComponentNameNumberof MOSFETs (billion)Remarks
2022Flash memoryMicron's V-NAND module5300stacked package of sixteen 232-layer 3D NAND dies
2020any processorWafer Scale Engine 22600wafer-scale design of 84 exposed fields (dies)
2026GPUNvidia Rubin0336Uses two reticle limit dies and two I/O dies, joined and acting as a single large monolithic piece of silicon
2025Microprocessor (consumer)Apple M3 Ultra0184SoC using two dies joined with a high-speed bridge

In terms of computer systems that consist of numerous integrated circuits, the supercomputer with the highest transistor count as of 2016[update] was the Chinese-designed Sunway TaihuLight, which has for all CPUs/nodes combined "about 400 trillion transistors in the processing part of the hardware" and "the DRAM includes about 12 quadrillion transistors, and that's about 97 percent of all the transistors." To compare, the smallest computer, as of 2018[update] dwarfed by a grain of rice, had on the order of 100,000 transistors. Early experimental solid-state computers had as few as 130 transistors but used large amounts of diode logic. The first carbon nanotube computer had 178 transistors and was a 1-bit one-instruction set computer, while a later one is 16-bit (its instruction set is 32-bit RISC-V though).

Ionic transistor chips ("water-based" analog limited processor), have up to hundreds of such transistors.

Estimates of the total numbers of transistors manufactured:

  • Up to 2014: 2.9×1021
  • Up to 2018: 1.3×1022

Transistor count

Plot of MOS transistor counts for microprocessors against dates of in­tro­duction. The curve shows counts doubling every two years, per Moore's law.

Microprocessors

A microprocessor incorporates the functions of a computer's central processing unit on a single integrated circuit. It is a multi-purpose, programmable device that accepts digital data as input, processes it according to instructions stored in its memory, and provides results as output.

The development of MOS integrated circuit technology in the 1960s led to the development of the first microprocessors. The 20-bit MP944, developed by Garrett AiResearch for the U.S. Navy's F-14 Tomcat fighter in 1970, is considered by its designer Ray Holt to be the first microprocessor. It was a multi-chip microprocessor, fabricated on six MOS chips. However, it was classified by the Navy until 1998. The 4-bit Intel 4004, released in 1971, was the first single-chip microprocessor.

Modern microprocessors typically include on-chip cache memories. The number of transistors used for these cache memories typically far exceeds the number of transistors used to implement the logic of the microprocessor (that is, excluding the cache). For example, the last DEC Alpha chip uses 90% of its transistors for cache.

ProcessorTransistor countYearDesignerProcess (nm)Area (mm2)Transistor density (tr./mm2)
MP944 (20-bit, 6-chip, 28 chips total)74,442 (5,360 excl. ROM & RAM)1970Garrett AiResearch???
Intel 4004 (4-bit, 16-pin)2,2501971Intel10,000nm12mm2188
TMX 1795 (8-bit, 24-pin)3,0781971Texas Instruments?30.64mm2100.5
Intel 8008 (8-bit, 18-pin)3,5001972Intel10,000nm14mm2250
NEC μCOM-4 (4-bit, 42-pin)2,5001973NEC7,500nm??
Toshiba TLCS-12 (12-bit)11,000+1973Toshiba6,000nm32.45mm2340+
Intel 4040 (4-bit, 16-pin)3,0001974Intel10,000nm12mm2250
Motorola 6800 (8-bit, 40-pin)4,1001974Motorola6,000nm16mm2256
Intel 8080 (8-bit, 40-pin)6,0001974Intel6,000nm20mm2300
TMS 1000 (4-bit, 28-pin)8,0001974Texas Instruments8,000nm11mm2730
HP Nanoprocessor (8-bit, 40-pin)4,6391974Hewlett-Packard?19mm2?
MOS Technology 6502 (8-bit, 40-pin)4,5281975MOS Technology8,000nm21mm2216
Intersil IM6100 (12-bit, 40-pin; clone of PDP-8)4,0001975Intersil???
CDP 1801 (8-bit, 2-chip, 40-pin)5,0001975RCA???
RCA 1802 (8-bit, 40-pin)5,0001976RCA5,000nm27mm2185
Zilog Z80 (8-bit, 4-bit ALU, 40-pin)8,5001976Zilog4,000nm18mm2470
Intel 8085 (8-bit, 40-pin)6,5001976Intel3,000nm20mm2325
TMS9900 (16-bit)8,0001976Texas Instruments6,000nm??
Bellmac-8 (8-bit)7,0001977Bell Labs5,000nm??
Motorola 6809 (8-bit with some 16-bit features, 40-pin)9,0001978Motorola5,000nm21mm2430
Intel 8086 (16-bit, 40-pin)29,0001978Intel3,000nm33mm2880
Zilog Z8000 (16-bit)17,5001979Zilog5,000-6,000nm (design rules)39.31mm2 (238x256 mil2)445
Intel 8088 (16-bit, 8-bit data bus)29,0001979Intel3,000nm33mm2880
Motorola 68000 (16/32-bit, 32-bit registers, 16-bit ALU)68,0001979Motorola3,500nm44mm21,550
Intel 8051 (8-bit, 40-pin)50,0001980Intel???
WDC 65C0211,5001981WDC3,000nm6mm21,920
ROMP (32-bit)45,0001981IBM2,000nm58.52mm2770
Intel 80186 (16-bit, 68-pin)55,0001982Intel3,000nm60mm2920
Intel 80286 (16-bit, 68-pin)134,0001982Intel1,500nm49mm22,730
WDC 65C816 (8/16-bit)22,0001983WDC3,000nm9mm22,400
NEC V2063,0001984NEC???
Motorola 68020 (32-bit; 114 pins used)190,0001984Motorola2,000nm85mm22,200
Intel 80386 (32-bit, 132-pin; no cache)275,0001985Intel1,500nm104mm22,640
ARM 1 (32-bit; no cache)25,0001985Acorn3,000nm50mm2500
Novix NC4016 (16-bit)16,0001985Harris Corporation3,000nm??
SPARC MB86900 (32-bit; no cache)110,0001986Fujitsu1,200nm??
NEC V60 (32-bit; no cache)375,0001986NEC1,500nm??
ARM 2 (32-bit, 84-pin; no cache)27,0001986Acorn2,000nm30.25mm2890
Z80000 (32-bit; very small cache)91,0001986Zilog???
NEC V70 (32-bit; no cache)385,0001987NEC1,500nm??
Hitachi Gmicro/200730,0001987Hitachi1,000nm??
Motorola 68030 (32-bit, very small caches)273,0001987Motorola800nm102mm22,680
TI Explorer's 32-bit Lisp machine chip553,0001987Texas Instruments2,000nm??
DEC WRL MultiTitan180,0001988DEC WRL1,500nm61mm22,950
Intel i960 (32-bit, 33-bit memory subsystem, no cache)250,0001988Intel1,500nm??
Intel i960CA (32-bit, cache)600,0001989Intel800nm143mm24,200
Intel i860 (32/64-bit, 128-bit SIMD, cache, VLIW)1,000,0001989Intel???
Intel 80486 (32-bit, 8KB cache)1,180,2351989Intel1,000nm173mm26,822
ARM 3 (32-bit, 4KB cache)310,0001989Acorn1,500nm87mm23,600
POWER1 (9-chip module, 72 kB of cache)6,900,0001990IBM1,000nm1,283.61mm25,375
Motorola 68040 (32-bit, 8KB caches)1,200,0001990Motorola650nm152mm27,900
R4000 (64-bit, 16KB of caches)1,350,0001991MIPS1,000nm213mm26,340
ARM 6 (32-bit, no cache for this 60 variant)35,0001991ARM800nm??
Hitachi SH-1 (32-bit, no cache)600,0001992Hitachi800nm100mm26,000
Intel i960CF (32-bit, cache)900,0001992Intel?125mm27,200
Alpha 21064 (64-bit, 290-pin; 16KB of caches)1,680,0001992DEC750nm233.52mm27,190
Hitachi HARP-1 (32-bit, cache)2,800,0001993Hitachi500nm267mm210,500
Pentium (32-bit, 16KB of caches)3,100,0001993Intel800nm294mm210,500
POWER2 (8-chip module, 288 kB of cache)23,037,0001993IBM720nm1,217.39mm218,923
ARM700 (32-bit; 8KB cache)578,9771994ARM700nm68.51mm28,451
MuP21 (21-bit, 40-pin; includes video)7,0001994Offete Enterprises1,200nm??
Motorola 68060 (32-bit, 16KB of caches)2,500,0001994Motorola600nm218mm211,500
PowerPC 601 (32-bit, 32KB of caches)2,800,0001994Apple, IBM, Motorola600nm121mm223,000
PowerPC 603 (32-bit, 16KB of caches)1,600,0001994Apple, IBM, Motorola500nm84.76mm218,900
PowerPC 603e (32-bit, 32KB of caches)2,600,0001995Apple, IBM, Motorola500nm98mm226,500
Alpha 21164 EV5 (64-bit, 112 kB cache)9,300,0001995DEC500nm298.65mm231,140
SA-110 (32-bit, 32KB of caches)2,500,0001995Acorn, DEC, Apple350nm50mm250,000
Pentium Pro (32-bit, 16KB of caches; L2 cache on-package, but on separate die)5,500,0001995Intel500nm307mm218,000
PA-8000 64-bit, no cache3,800,0001995HP500nm337.69mm211,300
Alpha 21164A EV56 (64-bit, 112 kB cache)9,660,0001996DEC350nm208.8mm246,260
AMD K5 (32-bit, caches)4,300,0001996AMD500nm251mm217,000
Pentium II Klamath (32-bit, 64-bit SIMD, caches)7,500,0001997Intel350nm195mm239,000
AMD K6 (32-bit, caches)8,800,0001997AMD350nm162mm254,000
F21 (21-bit; includes e.g. video)15,0001997Offete Enterprises???
AVR (8-bit, 40-pin; w/memory)140,000 (48,000 excl. memory)1997Nordic VLSI/Atmel???
Pentium II Deschutes (32-bit, large cache)7,500,0001998Intel250nm113mm266,000
Alpha 21264 EV6 (64-bit)15,200,0001998DEC350nm313.96mm248,400
Alpha 21164PC PCA57 (64-bit, 48 kB cache)5,700,0001998Samsung280nm100.5mm256,700
Hitachi SH-4 (32-bit, caches)3,200,0001998Hitachi250nm57.76mm255,400
ARM 9TDMI (32-bit, no cache)111,0001999Acorn350nm4.8mm223,100
Pentium III Katmai (32-bit, 128-bit SIMD, caches)9,500,0001999Intel250nm128mm274,000
Emotion Engine (64-bit, 128-bit SIMD, cache)10,500,000 – 13,500,0001999Sony, Toshiba250nm239.7mm243,800 – 56,300
Pentium II Mobile Dixon (32-bit, caches)27,400,0001999Intel180nm180mm2152,000
AMD K6-III (32-bit, caches)21,300,0001999AMD250nm118mm2181,000
AMD K7 (32-bit, caches)22,000,0001999AMD250nm184mm2120,000
Gekko (32-bit, large cache)21,000,0002000IBM, Nintendo180nm43mm2490,000 (check)
Pentium III Coppermine (32-bit, large cache)21,000,0002000Intel180nm80mm2263,000
Pentium 4 Willamette (32-bit, large cache)42,000,0002000Intel180nm217mm2194,000
SPARC64 V (64-bit, large cache)191,000,0002001Fujitsu130nm290mm2659,000
Pentium III Tualatin (32-bit, large cache)45,000,0002001Intel130nm81mm2556,000
Pentium 4 Northwood (32-bit, large cache)55,000,0002002Intel130nm145mm2379,000
Itanium 2 McKinley (64-bit, large cache)220,000,0002002Intel180nm421mm2523,000
Alpha 21364 (64-bit, 946-pin, SIMD, very large caches)152,000,0002003DEC180nm397mm2383,000
AMD K7 Barton (32-bit, large cache)54,300,0002003AMD130nm101mm2538,000
AMD K8 (64-bit, large cache)105,900,0002003AMD130nm193mm2548,700
Pentium M Banias (32-bit)77,000,0002003Intel130nm83mm2928,000
Itanium 2 Madison 6M (64-bit)410,000,0002003Intel130nm374mm21,096,000
PlayStation 2 single chip (CPU + GPU)53,500,0002003Sony, Toshiba90nm 130nm86mm2622,100
Pentium 4 Prescott (32-bit, large cache)112,000,0002004Intel90nm110mm21,018,000
Pentium M Dothan (32-bit)144,000,0002004Intel90nm87mm21,655,000
SPARC64 V+ (64-bit, large cache)400,000,0002004Fujitsu90nm294mm21,360,000
Itanium 2 (64-bit;9MB cache)592,000,0002004Intel130nm432mm21,370,000
Pentium 4 Prescott-2M (32-bit, large cache)169,000,0002005Intel90nm143mm21,182,000
Pentium D Smithfield (64-bit, large cache)228,000,0002005Intel90nm206mm21,107,000
Xenon (64-bit, 128-bit SIMD, large cache)165,000,0002005IBM90nm??
Cell (32-bit, cache)250,000,0002005Sony, IBM, Toshiba90nm221mm21,131,000
Pentium 4 Cedar Mill (32-bit, large cache)184,000,0002006Intel65nm90mm22,044,000
Pentium D Presler (64-bit, large cache)362,000,0002006Intel65nm162mm22,235,000
Core 2 Duo Conroe (dual-core 64-bit, large caches)291,000,0002006Intel65nm143mm22,035,000
Dual-core Itanium 2 (64-bit, SIMD, large caches)1,700,000,0002006Intel90nm596mm22,852,000
AMD K10 quad-core 2M L3 (64-bit, large caches)463,000,0002007AMD65nm283mm21,636,000
ARM Cortex-A9 (32-bit, (optional) SIMD, caches)26,000,0002007ARM45nm31mm2839,000
Core 2 Duo Wolfdale (dual-core 64-bit, SIMD, caches)411,000,0002007Intel45nm107mm23,841,000
POWER6 (64-bit, large caches)789,000,0002007IBM65nm341mm22,314,000
Core 2 Duo Allendale (dual-core 64-bit, SIMD, large caches)169,000,0002007Intel65nm111mm21,523,000
Uniphier250,000,0002007Matsushita45nm??
SPARC64 VI (64-bit, SIMD, large caches)540,000,0002007Fujitsu90nm421mm21,283,000
Core 2 Duo Wolfdale 3M (dual-core 64-bit, SIMD, large caches)230,000,0002008Intel45nm83mm22,771,000
Core i7 (quad-core 64-bit, SIMD, large caches)731,000,0002008Intel45nm263mm22,779,000
AMD K10 quad-core 6M L3 (64-bit, SIMD, large caches)758,000,0002008AMD45nm258mm22,938,000
Atom (32-bit, large cache)47,000,0002008Intel45nm24mm21,958,000
SPARC64 VII (64-bit, SIMD, large caches)600,000,0002008Fujitsu65nm445mm21,348,000
Six-core Xeon 7400 (64-bit, SIMD, large caches)1,900,000,0002008Intel45nm503mm23,777,000
Six-core Opteron 2400 (64-bit, SIMD, large caches)904,000,0002009AMD45nm346mm22,613,000
SPARC64 VIIIfx (64-bit, SIMD, large caches)760,000,0002009Fujitsu45nm513mm21,481,000
Atom (Pineview) 64-bit, 1-core, 512 kB L2 cache123,000,0002010Intel45nm66mm21,864,000
Atom (Pineview) 64-bit, 2-core, 1 MB L2 cache176,000,0002010Intel45nm87mm22,023,000
SPARC T3 (16-core 64-bit, SIMD, large caches)1,000,000,0002010Sun/Oracle40nm377mm22,653,000
Six-core Core i7 (Gulftown)1,170,000,0002010Intel32nm240mm24,875,000
POWER7 32M L3 (8-core 64-bit, SIMD, large caches)1,200,000,0002010IBM45nm567mm22,116,000
Quad-core z196 (64-bit, very large caches)1,400,000,0002010IBM45nm512mm22,734,000
Quad-core Itanium Tukwila (64-bit, SIMD, large caches)2,000,000,0002010Intel65nm699mm22,861,000
Xeon Nehalem-EX (8-core 64-bit, SIMD, large caches)2,300,000,0002010Intel45nm684mm23,363,000
SPARC64 IXfx (64-bit, SIMD, large caches)1,870,000,0002011Fujitsu40nm484mm23,864,000
Quad-core + GPU Core i7 (64-bit, SIMD, large caches)1,160,000,0002011Intel32nm216mm25,370,000
Six-core Core i7/8-core Xeon E5 (Sandy Bridge-E/EP) (64-bit, SIMD, large caches)2,270,000,0002011Intel32nm434mm25,230,000
Xeon Westmere-EX (10-core 64-bit, SIMD, large caches)2,600,000,0002011Intel32nm512mm25,078,000
Atom "Medfield" (64-bit)432,000,0002012Intel32nm64mm26,750,000
SPARC64 X (64-bit, SIMD, caches)2,990,000,0002012Fujitsu28nm600mm24,983,000
AMD Bulldozer (8-core 64-bit, SIMD, caches)1,200,000,0002012AMD32nm315mm23,810,000
Quad-core + GPU AMD Trinity (64-bit, SIMD, caches)1,303,000,0002012AMD32nm246mm25,297,000
Quad-core + GPU Core i7 Ivy Bridge (64-bit, SIMD, caches)1,400,000,0002012Intel22nm160mm28,750,000
POWER7+ (8-core 64-bit, SIMD, 80MB L3 cache)2,100,000,0002012IBM32nm567mm23,704,000
Six-core zEC12 (64-bit, SIMD, large caches)2,750,000,0002012IBM32nm597mm24,606,000
Itanium Poulson (8-core 64-bit, SIMD, caches)3,100,000,0002012Intel32nm544mm25,699,000
Xeon Phi (61-core 32-bit, 512-bit SIMD, caches)5,000,000,0002012Intel22nm720mm26,944,000
Apple A7 (dual-core 64/32-bit ARM64, "mobile SoC", SIMD, caches)1,000,000,0002013Apple28nm102mm29,804,000
Six-core Core i7 Ivy Bridge E (64-bit, SIMD, caches)1,860,000,0002013Intel22nm256mm27,266,000
POWER8 (12-core 64-bit, SIMD, caches)4,200,000,0002013IBM22nm650mm26,462,000
Xbox One main SoC (64-bit, SIMD, caches)5,000,000,0002013Microsoft, AMD28nm363mm213,770,000
Quad-core + GPU Core i7 Haswell (64-bit, SIMD, caches)1,400,000,0002014Intel22nm177mm27,910,000
Apple A8 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)2,000,000,0002014Apple20nm89mm222,470,000
Core i7 Haswell-E (8-core 64-bit, SIMD, caches)2,600,000,0002014Intel22nm355mm27,324,000
Apple A8X (tri-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)3,000,000,0002014Apple20nm128mm223,440,000
Xeon Ivy Bridge-EX (15-core 64-bit, SIMD, caches)4,310,000,0002014Intel22nm541mm27,967,000
Xeon Haswell-E5 (18-core 64-bit, SIMD, caches)5,560,000,0002014Intel22nm661mm28,411,000
Quad-core + GPU GT2 Core i7 Skylake K (64-bit, SIMD, caches)1,750,000,0002015Intel14nm122mm214,340,000
Dual-core + GPU Iris Core i7 Broadwell-U (64-bit, SIMD, caches)1,900,000,0002015Intel14nm133mm214,290,000
Apple A9 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)2,000,000,000+2015Apple14nm (Samsung)96mm2 (Samsung)20,800,000+
16nm (TSMC)104.5mm2 (TSMC)19,100,000+
Apple A9X (dual core 64/32-bit ARM64 "mobile SoC", SIMD, caches)3,000,000,000+2015Apple16nm143.9mm220,800,000+
IBM z13 (64-bit, caches)3,990,000,0002015IBM22nm678mm25,885,000
IBM z13 Storage Controller7,100,000,0002015IBM22nm678mm210,472,000
SPARC M7 (32-core 64-bit, SIMD, caches)10,000,000,0002015Oracle20nm??
Core i7 Broadwell-E (10-core 64-bit, SIMD, caches)3,200,000,0002016Intel14nm246mm213,010,000
Apple A10 Fusion (quad-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)3,300,000,0002016Apple16nm125mm226,400,000
HiSilicon Kirin 960 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)4,000,000,0002016Huawei16nm110.00mm236,360,000
Xeon Broadwell-E5 (22-core 64-bit, SIMD, caches)7,200,000,0002016Intel14nm456mm215,790,000
Xeon Phi (72-core 64-bit, 512-bit SIMD, caches)8,000,000,0002016Intel14nm683mm211,710,000
Zip CPU (32-bit, for FPGAs)1,286 6-LUTs2016Gisselquist Technology???
Qualcomm Snapdragon 835 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)3,000,000,0002016Qualcomm10nm72.3mm241,490,000
Apple A11 Bionic (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)4,300,000,0002017Apple10nm89.23mm248,190,000
AMD Zen CCX (core complex unit: 4 cores, 8 MB L3 cache)1,400,000,0002017AMD14nm (GF14LPP)44mm231,800,000
AMD Zeppelin SoC Ryzen (64-bit, SIMD, caches)4,800,000,0002017AMD14nm192mm225,000,000
AMD Ryzen 5 1600 Ryzen (64-bit, SIMD, caches)4,800,000,0002017AMD14nm213mm222,530,000
IBM z14 (64-bit, SIMD, caches)6,100,000,0002017IBM14nm696mm28,764,000
IBM z14 Storage Controller (64-bit)9,700,000,0002017IBM14nm696mm213,940,000
HiSilicon Kirin 970 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)5,500,000,0002017Huawei10nm96.72mm256,900,000
Xbox One X (Project Scorpio) main SoC (64-bit, SIMD, caches)7,000,000,0002017Microsoft, AMD16nm360mm219,440,000
Xeon Platinum 8180 (28-core 64-bit, SIMD, caches)8,000,000,0002017Intel14nm??
Xeon (unspecified)7,100,000,0002017Intel14nm672mm210,570,000
POWER9 (64-bit, SIMD, caches)8,000,000,0002017IBM14nm695mm211,500,000
Freedom U500 Base Platform Chip (E51, 4×U54) RISC-V (64-bit, caches)250,000,0002017SiFive28nm~30mm28,330,000
SPARC64 XII (12-core 64-bit, SIMD, caches)5,450,000,0002017Fujitsu20nm795mm26,850,000
Apple A10X Fusion (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)4,300,000,0002017Apple10nm96.40mm244,600,000
Centriq 2400 (64/32-bit, SIMD, caches)18,000,000,0002017Qualcomm10nm398mm245,200,000
AMD Epyc (32-core 64-bit, SIMD, caches)19,200,000,0002017AMD14nm768mm225,000,000
Qualcomm Snapdragon 845 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)5,300,000,0002017Qualcomm10nm94mm256,400,000
Qualcomm Snapdragon 850 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)5,300,000,0002017Qualcomm10nm94mm256,400,000
HiSilicon Kirin 710 (octa-core ARM64 "mobile SoC", SIMD, caches)5,500,000,0002018Huawei12nm??
Apple A12 Bionic (hexa-core ARM64 "mobile SoC", SIMD, caches)6,900,000,0002018Apple7nm83.27mm282,900,000
HiSilicon Kirin 980 (octa-core ARM64 "mobile SoC", SIMD, caches)6,900,000,0002018Huawei7nm74.13mm293,100,000
Qualcomm Snapdragon 8cx / SCX8180 (octa-core ARM64 "mobile SoC", SIMD, caches)8,500,000,0002018Qualcomm7nm112mm275,900,000
Apple A12X Bionic (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)10,000,000,0002018Apple7nm122mm282,000,000
Fujitsu A64FX (64/32-bit, SIMD, caches)8,786,000,0002018Fujitsu7nm??
Tegra Xavier SoC (64/32-bit)9,000,000,0002018Nvidia12nm350mm225,700,000
Qualcomm Snapdragon 855 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)6,700,000,0002018Qualcomm7nm73mm291,800,000
AMD Zen 2 core (0.5 MB L2 + 4 MB L3 cache)475,000,0002019AMD7nm7.83mm260,664,000
AMD Zen 2 CCX (core complex: 4 cores, 16 MB L3 cache)1,900,000,0002019AMD7nm31.32mm260,664,000
AMD Zen 2 CCD (core complex die: 8 cores, 32 MB L3 cache)3,800,000,0002019AMD7nm74mm251,350,000
AMD Zen 2 client I/O die2,090,000,0002019AMD12nm125mm216,720,000
AMD Zen 2 server I/O die8,340,000,0002019AMD12nm416mm220,050,000
AMD Zen 2 Renoir die9,800,000,0002019AMD7nm156mm262,820,000
AMD Ryzen 7 3700X (64-bit, SIMD, caches, I/O die)5,990,000,0002019AMD7 & 12nm (TSMC)199 (74+125)mm230,100,000
HiSilicon Kirin 990 4G8,000,000,0002019Huawei7nm90.00mm289,000,000
Apple A13 (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches)8,500,000,0002019Apple7nm98.48mm286,300,000
IBM z15 CP chip (12 cores, 256 MB L3 cache)9,200,000,0002019IBM14nm696mm213,220,000
IBM z15 SC chip (960 MB L4 cache)12,200,000,0002019IBM14nm696mm217,530,000
AMD Ryzen 9 3900X (64-bit, SIMD, caches, I/O die)9,890,000,0002019AMD7 & 12nm (TSMC)273mm236,230,000
HiSilicon Kirin 990 5G10,300,000,0002019Huawei7nm113.31mm290,900,000
AWS Graviton2 (64-bit, 64-core ARM-based, SIMD, caches)30,000,000,0002019Amazon7nm??
AMD Epyc Rome (64-bit, SIMD, caches)39,540,000,0002019AMD7 & 12nm (TSMC)1,008mm239,226,000
Qualcomm Snapdragon 865 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)10,300,000,0002019Qualcomm7nm83.54mm2123,300,000
TI Jacinto TDA4VM (ARM A72, DSP, SRAM)3,500,000,0002020Texas Instruments16nm??
Apple A14 Bionic (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches)11,800,000,0002020Apple5nm88mm2134,100,000
Apple M1 (octa-core 64-bit ARM64 SoC, SIMD, caches)16,000,000,0002020Apple5nm119mm2134,500,000
HiSilicon Kirin 900015,300,000,0002020Huawei5nm114mm2134,200,000
AMD Zen 3 CCX (core complex unit: 8 cores, 32 MB L3 cache)4,080,000,0002020AMD7nm68mm260,000,000
AMD Zen 3 CCD (core complex die)4,150,000,0002020AMD7nm81mm251,230,000
Core 11th gen Rocket Lake (8-core 64-bit, SIMD, large caches)6,000,000,000+2021Intel14nm +++ 14nm276mm237,500,000 or 21,800,000+
AMD Ryzen 7 5800H (64-bit, SIMD, caches, I/O and GPU)10,700,000,0002021AMD7nm180mm259,440,000
AMD Epyc 7763 (Milan) (64-core, 64-bit)?2021AMD7 & 12nm (TSMC)1,064mm2 (8×81+416)?
Apple A1515,000,000,0002021Apple5nm107.68mm2139,300,000
Apple M1 Pro (10-core, 64-bit)33,700,000,0002021Apple5nm245mm2137,600,000
Apple M1 Max (10-core, 64-bit)57,000,000,0002021Apple5nm420.2mm2135,600,000
Power10 dual-chip module (30 SMT8 cores or 60 SMT4 cores)36,000,000,0002021IBM7nm1,204mm229,900,000
Dimensity 9000 (ARM64 SoC)15,300,000,0002021Mediatek4nm (TSMC N4)??
Apple A16 (ARM64 SoC)16,000,000,0002022Apple4nm??
Apple M1 Ultra (dual-chip module, 2×10 cores)114,000,000,0002022Apple5nm840.5mm2135,600,000
AMD Epyc 7773X (Milan-X) (multi-chip module, 64 cores, 768 MB L3 cache)26,000,000,000 + Milan2022AMD7 & 12nm (TSMC)1,352mm2 (Milan + 8×36)?
IBM Telum dual-chip module (2×8 cores, 2×256 MB cache)45,000,000,0002022IBM7nm (Samsung)1,060mm242,450,000
Apple M2 (octa-core 64-bit ARM64 SoC, SIMD, caches)20,000,000,0002022Apple5nm??
Dimensity 9200 (ARM64 SoC)17,000,000,0002022Mediatek4nm (TSMC N4P)??
Qualcomm Snapdragon 8 Gen 2 (octa-core ARM64 "mobile SoC", SIMD, caches)16,000,000,0002022Qualcomm4nm268mm259,701,492
AMD EPYC Genoa (4th gen/9004 series) 13-chip module (up to 96 cores and 384 MB (L3) + 96 MB (L2) cache)90,000,000,0002022AMD5nm (CCD) 6nm (IOD)1,263.34mm2 12×72.225 (CCD) 396.64 (IOD)71,240,000
HiSilicon Kirin 9000s9,510,000,0002023Huawei7nm107mm2107,690,000
Apple M4 (deca-core 64-bit ARM64 SoC, SIMD, caches)28,000,000,0002024Apple3nm??
Apple M3 (octa-core 64-bit ARM64 SoC, SIMD, caches)25,000,000,0002023Apple3nm??
Apple M3 Pro (dodeca-core 64-bit ARM64 SoC, SIMD, caches)37,000,000,0002023Apple3nm??
Apple M3 Max (16-core 64-bit ARM64 SoC, SIMD, caches)92,000,000,0002023Apple3nm??
Apple A1719,000,000,0002023Apple3nm103.8mm2183,044,315
Sapphire Rapids quad-chip module (up to 60 cores and 112.5 MB of cache)44,000,000,000– 48,000,000,0002023Intel10nm ESF (Intel 7)1,600mm227,500,000– 30,000,000
Apple M2 Pro (12-core 64-bit ARM64 SoC, SIMD, caches)40,000,000,0002023Apple5nm??
Apple M2 Max (12-core 64-bit ARM64 SoC, SIMD, caches)67,000,000,0002023Apple5nm??
Apple M2 Ultra (two M2 Max dies)134,000,000,0002023Apple5nm??
AMD Epyc Bergamo (4th gen/97X4 series) 9-chip module (up to 128 cores and 256 MB (L3) + 128 MB (L2) cache)82,000,000,0002023AMD5nm (CCD) 6nm (IOD)??
AMD Instinct MI300A (multi-chip module, 24 cores, 128GB GPU memory + 256MB (LLC/L3) cache)146,000,000,0002023AMD5nm (CCD, GCD) 6nm (IOD)1,017mm2144,000,000
RV32-WUJI: 3-atom-thick molybdenum disulfide on sapphire; RISC-V architecture59312025?3000nm??
NVIDIA Vera (multi-chip module, 88-cores 64-bit Armv9.2, 176MB L2 + 162MB L3 cache)227,000,000,0002026Nvidia3nm??
ProcessorTransistor countYearDesignerProcess (nm)Area (mm2)Transistor density (tr./mm2)

GPUs

A graphics processing unit (GPU) is a specialized electronic circuit designed to rapidly manipulate and alter memory to accelerate the building of images in a frame buffer intended for output to a display.

The designer refers to the technology company that designs the logic of the integrated circuit chip (such as Nvidia and AMD). The manufacturer ("Fab.") refers to the semiconductor company that fabricates the chip using its semiconductor manufacturing process at a foundry (such as TSMC and Samsung Semiconductor). The transistor count in a chip is dependent on a manufacturer's fabrication process, with smaller semiconductor nodes typically enabling higher transistor density and thus higher transistor counts.

The random-access memory (RAM) that comes with GPUs (such as VRAM, SGRAM or HBM) greatly increases the total transistor count, with the memory typically accounting for the majority of transistors in a graphics card. For example, Nvidia's Tesla P100 has 15billion FinFETs (16 nm) in the GPU in addition to 16GB of HBM2 memory, totaling about 150billion MOSFETs on the graphics card. The following table does not include the memory. For memory transistor counts, see the Memory section below.

ProcessorTransistor countYearDesigner(s)Fab(s)ProcessAreaTransistor density (tr./mm2)Ref
μPD7220 GDC40,0001982NECNEC5,000nm??
ARTC HD6348460,0001984HitachiHitachi???
CBM Agnus21,0001985CommodoreCSG5,000nm??
YM7101 VDP100,0001988Yamaha, SegaYamaha???
Tom & Jerry750,0001993FlareIBM???
VDP11,000,0001994SegaHitachi500nm??
Sony GPU1,000,0001994ToshibaLSI500nm??
NV11,000,0001995Nvidia, SegaSGS500nm90mm211,000
Reality Coprocessor2,600,0001996SGINEC350 nm81mm232,100
PowerVR1,200,0001996VideoLogicNEC350nm??
Voodoo Graphics1,000,00019963dfxTSMC500nm??
Voodoo Rush1,000,00019973dfxTSMC500nm??
NV33,500,0001997NvidiaSGS, TSMC350nm90mm238,900
i7403,500,0001998Intel, Real3DReal3D350nm??
Voodoo 24,000,00019983dfxTSMC350nm??
Voodoo Rush4,000,00019983dfxTSMC350nm??
NV47,000,0001998NvidiaTSMC350nm90mm278,000
PowerVR2 CLX210,000,0001998VideoLogicNEC250nm116mm286,200
PowerVR2 PMX16,000,0001999VideoLogicNEC250nm??
Rage 1288,000,0001999ATITSMC, UMC250nm70mm2114,000
Voodoo 38,100,00019993dfxTSMC250nm??
Graphics Synthesizer43,000,0001999Sony, ToshibaSony, Toshiba180 nm279mm2154,000
NV515,000,0001999NvidiaTSMC250nm90mm2167,000
NV1017,000,0001999NvidiaTSMC220nm111mm2153,000
NV1120,000,0002000NvidiaTSMC180nm65mm2308,000
NV1525,000,0002000NvidiaTSMC180nm81mm2309,000
Voodoo 414,000,00020003dfxTSMC220nm??
Voodoo 528,000,00020003dfxTSMC220nm??
R10030,000,0002000ATITSMC180nm97mm2309,000
Flipper51,000,0002000ArtXNEC180nm106mm2481,000
PowerVR3 KYRO14,000,0002001ImaginationST250nm??
PowerVR3 KYRO II15,000,0002001ImaginationST180nm
NV2A60,000,0002001NvidiaTSMC150nm??
NV2057,000,0002001NvidiaTSMC150nm128mm2445,000
NV2563,000,0002002NvidiaTSMC150nm142mm2444,000
NV2836,000,0002002NvidiaTSMC150nm101mm2356,000
NV17/1829,000,0002002NvidiaTSMC150nm65mm2446,000
R20060,000,0002001ATITSMC150nm68mm2882,000
R300107,000,0002002ATITSMC150nm218mm2490,800
R360117,000,0002003ATITSMC150nm218mm2536,700
NV3445,000,0002003NvidiaTSMC150nm124mm2363,000
NV34b45,000,0002004NvidiaTSMC140nm91mm2495,000
NV30125,000,0002003NvidiaTSMC130 nm199mm2628,000
NV3180,000,0002003NvidiaTSMC130 nm121mm2661,000
NV35/38135,000,0002003NvidiaTSMC130 nm207mm2652,000
NV3682,000,0002003NvidiaIBM130 nm133mm2617,000
R480160,000,0002004ATITSMC130nm297mm2538,700
NV40222,000,0002004NvidiaIBM130nm305mm2727,900
NV4475,000,0002004NvidiaIBM130nm110mm2681,800
NV41222,000,0002005NvidiaTSMC110nm225mm2986,700
NV42198,000,0002005NvidiaTSMC110nm222mm2891,900
NV43146,000,0002005NvidiaTSMC110nm154mm2948,100
G70303,000,0002005NvidiaTSMC, Chartered110nm333mm2909,900
Xenos232,000,0002005ATITSMC90 nm182mm21,275,000
RSX Reality Synthesizer300,000,0002005Nvidia, SonySony90nm186mm21,613,000
R520321,000,0002005ATITSMC90nm288mm21,115,000
RV530157,000,0002005ATITSMC90nm150mm21,047,000
RV515107,000,0002005ATITSMC90nm100mm21,070,000
R580384,000,0002006ATITSMC90nm352mm21,091,000
G71278,000,0002006NvidiaTSMC90nm196mm21,418,000
G72112,000,0002006NvidiaTSMC90nm81mm21,383,000
G73177,000,0002006NvidiaTSMC90nm125mm21,416,000
G80681,000,0002006NvidiaTSMC90nm480mm21,419,000
G86 Tesla210,000,0002007NvidiaTSMC80nm127mm21,654,000
G84 Tesla289,000,0002007NvidiaTSMC80nm169mm21,710,000
RV560330,000,0002006ATITSMC80nm230mm21,435,000
R600700,000,0002007ATITSMC80nm420mm21,667,000
RV610180,000,0002007ATITSMC65nm85mm22,118,000
RV630390,000,0002007ATITSMC65nm153mm22,549,000
G92754,000,0002007NvidiaTSMC, UMC65 nm324mm22,327,000
G94 Tesla505,000,0002008NvidiaTSMC65nm240mm22,104,000
G96 Tesla314,000,0002008NvidiaTSMC65nm144mm22,181,000
G98 Tesla210,000,0002008NvidiaTSMC65nm86mm22,442,000
GT2001,400,000,0002008NvidiaTSMC65nm576mm22,431,000
RV620181,000,0002008ATITSMC55nm67mm22,701,000
RV635378,000,0002008ATITSMC55nm135mm22,800,000
RV710242,000,0002008ATITSMC55nm73mm23,315,000
RV730514,000,0002008ATITSMC55nm146mm23,521,000
RV670666,000,0002008ATITSMC55nm192mm23,469,000
RV770956,000,0002008ATITSMC55nm256mm23,734,000
RV790959,000,0002008ATITSMC55nm282mm23,401,000
G92b Tesla754,000,0002008NvidiaTSMC, UMC55nm260mm22,900,000
G94b Tesla505,000,0002008NvidiaTSMC, UMC55nm196mm22,577,000
G96b Tesla314,000,0002008NvidiaTSMC, UMC55nm121mm22,595,000
GT200b Tesla1,400,000,0002008NvidiaTSMC, UMC55nm470mm22,979,000
GT218 Tesla260,000,0002009NvidiaTSMC40 nm57mm24,561,000
GT216 Tesla486,000,0002009NvidiaTSMC40nm100mm24,860,000
GT215 Tesla727,000,0002009NvidiaTSMC40nm144mm25,049,000
RV740826,000,0002009ATITSMC40nm137mm26,029,000
Cypress RV8702,154,000,0002009ATITSMC40nm334mm26,449,000
Juniper RV8401,040,000,0002009ATITSMC40nm166mm26,265,000
Redwood RV830627,000,0002010AMD (ATI)TSMC40nm104mm26,029,000
Cedar RV810292,000,0002010AMDTSMC40nm59mm24,949,000
Cayman RV9702,640,000,0002010AMDTSMC40nm389mm26,789,000
Barts RV9401,700,000,0002010AMDTSMC40nm255mm26,667,000
Turks RV930716,000,0002011AMDTSMC40nm118mm26,068,000
Caicos RV910370,000,0002011AMDTSMC40nm67mm25,522,000
GF100 Fermi3,200,000,0002010NvidiaTSMC40nm526mm26,084,000
GF110 Fermi3,000,000,0002010NvidiaTSMC40nm520mm25,769,000
GF104 Fermi1,950,000,0002011NvidiaTSMC40nm332mm25,873,000
GF106 Fermi1,170,000,0002010NvidiaTSMC40nm238mm24,916,000
GF108 Fermi585,000,0002011NvidiaTSMC40nm116mm25,043,000
GF119 Fermi292,000,0002011NvidiaTSMC40nm79mm23,696,000
Tahiti GCN14,312,711,8732011AMDTSMC28nm365mm211,820,000
Cape Verde GCN11,500,000,0002012AMDTSMC28nm123mm212,200,000
Pitcairn GCN12,800,000,0002012AMDTSMC28nm212mm213,210,000
GK110 Kepler7,080,000,0002012NvidiaTSMC28nm561mm212,620,000
GK104 Kepler3,540,000,0002012NvidiaTSMC28nm294mm212,040,000
GK106 Kepler2,540,000,0002012NvidiaTSMC28nm221mm211,490,000
GK107 Kepler1,270,000,0002012NvidiaTSMC28nm118mm210,760,000
GK208 Kepler1,020,000,0002013NvidiaTSMC28nm79mm212,910,000
Oland GCN11,040,000,0002013AMDTSMC28nm90mm211,560,000
Bonaire GCN22,080,000,0002013AMDTSMC28nm160mm213,000,000
Durango (Xbox One)4,800,000,0002013AMDTSMC28nm375mm212,800,000
Liverpool (PlayStation 4)?2013AMDTSMC28nm348mm2?
Hawaii GCN26,300,000,0002013AMDTSMC28nm438mm214,380,000
GM200 Maxwell8,000,000,0002015NvidiaTSMC28nm601mm213,310,000
GM204 Maxwell5,200,000,0002014NvidiaTSMC28nm398mm213,070,000
GM206 Maxwell2,940,000,0002014NvidiaTSMC28nm228mm212,890,000
GM107 Maxwell1,870,000,0002014NvidiaTSMC28nm148mm212,640,000
Tonga GCN35,000,000,0002014AMDTSMC, GlobalFoundries28nm366mm213,660,000
Fiji GCN38,900,000,0002015AMDTSMC28nm596mm214,930,000
Durango 2 (Xbox One S)5,000,000,0002016AMDTSMC16nm240mm220,830,000
Neo (PlayStation 4 Pro)5,700,000,0002016AMDTSMC16nm325mm217,540,000
Ellesmere/Polaris10GCN45,700,000,0002016AMDSamsung, GlobalFoundries14nm232mm224,570,000
Baffin/Polaris 11 GCN43,000,000,0002016AMDSamsung, GlobalFoundries14 nm123mm224,390,000
Lexa/Polaris 12 GCN42,200,000,0002017AMDSamsung, GlobalFoundries14nm101mm221,780,000
GP100 Pascal15,300,000,0002016NvidiaTSMC, Samsung16nm610mm225,080,000
GP102 Pascal11,800,000,0002016NvidiaTSMC, Samsung16nm471mm225,050,000
GP104 Pascal7,200,000,0002016NvidiaTSMC16nm314mm222,930,000
GP106 Pascal4,400,000,0002016NvidiaTSMC16nm200mm222,000,000
GP107 Pascal3,300,000,0002016NvidiaSamsung14nm132mm225,000,000
GP108 Pascal1,850,000,0002017NvidiaSamsung14nm74mm225,000,000
Scorpio (Xbox One X)6,600,000,0002017AMDTSMC16nm367mm217,980,000
Vega 10 GCN512,500,000,0002017AMDSamsung, GlobalFoundries14nm484mm225,830,000
GV100 Volta21,100,000,0002017NvidiaTSMC12 nm815mm225,890,000
TU102 Turing18,600,000,0002018NvidiaTSMC12nm754mm224,670,000
TU104 Turing13,600,000,0002018NvidiaTSMC12nm545mm224,950,000
TU106 Turing10,800,000,0002018NvidiaTSMC12nm445mm224,270,000
TU116 Turing6,600,000,0002019NvidiaTSMC12nm284mm223,240,000
TU117 Turing4,700,000,0002019NvidiaTSMC12nm200mm223,500,000
Vega 20 GCN513,230,000,0002018AMDTSMC7 nm331mm239,970,000
Navi 10 RDNA10,300,000,0002019AMDTSMC7nm251mm241,040,000
Navi 12 RDNA?2020AMDTSMC7nm??
Navi 14 RDNA6,400,000,0002019AMDTSMC7nm158mm240,510,000
Arcturus CDNA25,600,000,0002020AMDTSMC7nm750mm234,100,000
GA100 Ampere54,200,000,0002020NvidiaTSMC7nm826mm265,620,000
GA102 Ampere28,300,000,0002020NvidiaSamsung8nm628mm245,035,000
GA103 Ampere22,000,000,0002022NvidiaSamsung8nm496mm244,400,000
GA104 Ampere17,400,000,0002020NvidiaSamsung8nm392mm244,390,000
GA106 Ampere12,000,000,0002021NvidiaSamsung8nm276mm243,480,000
GA107 Ampere8,700,000,0002021NvidiaSamsung8nm200mm243,500,000
Navi 21 RDNA226,800,000,0002020AMDTSMC7nm520mm251,540,000
Navi 22 RDNA217,200,000,0002021AMDTSMC7nm335mm251,340,000
Navi 23 RDNA211,060,000,0002021AMDTSMC7nm237mm246,670,000
Navi 24 RDNA25,400,000,0002022AMDTSMC6nm107mm250,470,000
Aldebaran CDNA258,200,000,000 (MCM)2021AMDTSMC6nm1448–1474mm2 1480mm2 1490–1580mm239,500,000–40,200,000 39,200,000 36,800,000–39,100,000
GH100 Hopper80,000,000,0002022NvidiaTSMC4nm814mm298,280,000
AD102 Ada Lovelace76,300,000,0002022NvidiaTSMC4nm608.4mm2125,411,000
AD103 Ada Lovelace45,900,000,0002022NvidiaTSMC4nm378.6mm2121,240,000
AD104 Ada Lovelace35,800,000,0002022NvidiaTSMC4nm294.5mm2121,560,000
AD106 Ada Lovelace?2023NvidiaTSMC4nm190mm2?
AD107 Ada Lovelace?2023NvidiaTSMC4nm146mm2?
Navi 31 RDNA357,700,000,000(MCM) 45,400,000,000(GCD) 6×2,050,000,000(MCD)2022AMDTSMC5nm(GCD) 6nm(MCD)531mm2(MCM) 306mm2(GCD) 6×37.5mm2(MCD)109,200,000(MCM) 132,400,000(GCD) 54,640,000(MCD)
Navi 32 RDNA328,100,000,000(MCM)2023AMDTSMC5nm(GCD) 6nm(MCD)350mm2(MCM) 200mm2(GCD) 4×37.5mm2(MCD)80,200,000(MCM)
Navi 33 RDNA313,300,000,0002023AMDTSMC6nm204mm265,200,000
Aqua Vanjaram CDNA3153,000,000,000 (MCM)2023AMDTSMC5nm(GCD) 6nm(MCD)??
GB200 Grace Blackwell208,000,000,000 (MCM)2024NvidiaTSMC4nm??
GB202 Blackwell92,200,000,0002025NvidiaTSMC4nm750mm2122,600,000
GB203 Blackwell45,600,000,0002025NvidiaTSMC4nm378mm2120,600,000
GB205 Blackwell31,100,000,0002025NvidiaTSMC4nm263mm2118,300,000
GB206 Blackwell21,900,000,0002025NvidiaTSMC4nm181mm2121,000,000
GB207 Blackwell16,900,000,0002025NvidiaTSMC4nm149mm2113,400,000
Navi 44 RDNA429,700,000,0002025AMDTSMC4nm199mm2149,200,000
Navi 48 RDNA453,900,000,0002025AMDTSMC4nm357mm2151,000,000
GR200 Rubin336,000,000,000 (MCM)2026NvidiaTSMC3nm??
ProcessorTransistor countYearDesigner(s)Fab(s)MOS processAreaTransistor density (tr./mm2)Ref

FPGA

A field-programmable gate array (FPGA) is an integrated circuit designed to be configured by a customer or a designer after manufacturing.

FPGATransistor countDate of introductionDesignerManufacturerProcessAreaTransistor density, tr./mm2Ref
Virtex70,000,0001997Xilinx
Virtex-E200,000,0001998Xilinx
Virtex-II350,000,0002000Xilinx130nm
Virtex-II PRO430,000,0002002Xilinx
Virtex-41,000,000,0002004Xilinx90nm
Virtex-51,100,000,0002006XilinxTSMC65nm
Stratix IV2,500,000,0002008AlteraTSMC40nm
Stratix V3,800,000,0002011AlteraTSMC28nm[citation needed]
Arria 105,300,000,0002014AlteraTSMC20nm
Virtex-7 2000T6,800,000,0002011XilinxTSMC28nm
Stratix 10 SX 280017,000,000,000TBDIntelIntel14nm560mm230,400,000
Virtex-Ultrascale VU44020,000,000,000Q1 2015XilinxTSMC20nm
Virtex-Ultrascale+ VU19P35,000,000,0002020XilinxTSMC16nm900mm238,900,000
Versal VC190237,000,000,0002H 2019XilinxTSMC7nm
Stratix 10 GX 10M43,300,000,000Q4 2019IntelIntel14nm1,400mm230,930,000
Versal VP180292,000,000,0002021 ?XilinxTSMC7nm

Memory

Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on integrated circuits. Nearly all semiconductor memories since the 1970s have used MOSFETs (MOS transistors), replacing earlier bipolar junction transistors. There are two major types of semiconductor memory: random-access memory (RAM) and non-volatile memory (NVM). In turn, there are two major RAM types: dynamic random-access memory (DRAM) and static random-access memory (SRAM), as well as two major NVM types: flash memory and read-only memory (ROM).

Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is common. Capacitor charged or not[clarification needed] is used to store 1 or 0. In flash memory, the data is stored in floating gates, and the resistance of the transistor is sensed[clarification needed] to interpret the data stored. Depending on how fine scale the resistance could be separated[clarification needed], one transistor could store up to three bits, meaning eight distinctive levels of resistance possible per transistor. However, a finer scale comes with the cost of repeatability issues, and hence reliability. Typically, low grade 2-bits MLC flash is used for flash drives, so a 16GB flash drive contains roughly 64 billion transistors.

For SRAM chips, six-transistor cells (six transistors per bit) was the standard. DRAM chips during the early 1970s had three-transistor cells (three transistors per bit), before single-transistor cells (one transistor per bit) became standard since the era of 4Kb DRAM in the mid-1970s. In single-level flash memory, each cell contains one floating-gate MOSFET (one transistor per bit), whereas multi-level flash contains 2, 3 or 4 bits per transistor.

Flash memory chips are commonly stacked up in layers, up to 128-layer in production, and 136-layer managed, and available in end-user devices up to 69-layer from manufacturers.

Random-access memory (RAM)
Chip nameCapacity (bits)RAM typeTransistor countDate of introductionManufacturer(s)ProcessAreaTransistor density (tr./mm2)Ref
—N/a1-bitSRAM (cell)61963Fairchild—N/a—N/a?
—N/a1-bitDRAM (cell)11965Toshiba—N/a—N/a?
?8-bitSRAM (bipolar)481965SDS, Signetics???
SP9516-bitSRAM (bipolar)801965IBM???
TMC316216-bitSRAM (TTL)961966Transitron—N/a??
??SRAM (MOS)?1966NEC???
256-bitDRAM (IC)2561968Fairchild???
64-bitSRAM (PMOS)3841968Fairchild???
144-bitSRAM (NMOS)8641968NEC
1101256-bitSRAM (PMOS)1,5361969Intel12,000nm??
11021 KbDRAM (PMOS)3,0721970Intel, Honeywell???
11031KbDRAM (PMOS)3,0721970Intel8,000 nm10mm2307
μPD4031KbDRAM (NMOS)3,0721971NEC???
?2KbDRAM (PMOS)6,1441971General Instrument?12.7mm2484
21021KbSRAM (NMOS)6,1441972Intel???
?8KbDRAM (PMOS)8,1921973IBM?18.8mm2436
51011KbSRAM (CMOS)6,1441974Intel???
211616KbDRAM (NMOS)16,3841975Intel???
21144KbSRAM (NMOS)24,5761976Intel???
?4KbSRAM (CMOS)24,5761977Toshiba???
64KbDRAM (NMOS)65,5361977NTT?35.4mm21851
DRAM (VMOS)65,5361979Siemens?25.2mm22601
16KbSRAM (CMOS)98,3041980Hitachi, Toshiba???
256KbDRAM (NMOS)262,1441980NEC1,500nm41.6mm26302
NTT1,000nm34.4mm27620
64KbSRAM (CMOS)393,2161980Matsushita???
288KbDRAM294,9121981IBM?25mm211,800
64KbSRAM (NMOS)393,2161982Intel1,500nm??
256KbSRAM (CMOS)1,572,8641984Toshiba1,200nm??
8 MbDRAM8,388,608January 5, 1984Hitachi???
16MbDRAM (CMOS)16,777,2161987NTT700nm148mm2113,400
4MbSRAM (CMOS)25,165,8241990NEC, Toshiba, Hitachi, Mitsubishi???
64MbDRAM (CMOS)67,108,8641991Matsushita, Mitsubishi, Fujitsu, Toshiba400nm
KM48SL200016MbSDRAM16,777,2161992Samsung???
?16MbSRAM (CMOS)100,663,2961992Fujitsu, NEC400nm??
256MbDRAM (CMOS)268,435,4561993Hitachi, NEC250nm
1 GbDRAM1,073,741,824January 9, 1995NEC250nm??
Hitachi160nm??
SDRAM1,073,741,8241996Mitsubishi150nm??
SDRAM (SOI)1,073,741,8241997Hyundai???
4GbDRAM (4-bit)1,073,741,8241997NEC150nm??
DRAM4,294,967,2961998Hyundai???
8GbSDRAM (DDR3)8,589,934,592April 2008Samsung50nm??
16GbSDRAM (DDR3)17,179,869,1842008
32GbSDRAM (HBM2)34,359,738,3682016Samsung20nm??
64GbSDRAM (HBM2)68,719,476,7362017
128GbSDRAM (DDR4)137,438,953,4722018Samsung10nm??
?RRAM (3DSoC)?2019SkyWater Technology90nm??
Flash memory
Chip nameCapacity (bits)Flash typeFGMOS transistor countDate of introductionManufacturer(s)ProcessAreaTransistor density (tr./mm2)Ref
?256 KbNOR262,1441985Toshiba2,000nm??
1 MbNOR1,048,5761989Seeq, Intel?
4MbNAND4,194,3041989Toshiba1,000nm
16MbNOR16,777,2161991Mitsubishi600nm
DD28F032SA32MbNOR33,554,4321993Intel?280mm2120,000
?64MbNOR67,108,8641994NEC400nm??
NAND67,108,8641996Hitachi
128MbNAND134,217,7281996Samsung, Hitachi?
256MbNAND268,435,4561999Hitachi, Toshiba250nm
512MbNAND536,870,9122000Toshiba???
1 Gb2-bit NAND536,870,9122001Samsung???
Toshiba, SanDisk160nm??
2GbNAND2,147,483,6482002Samsung, Toshiba???
8GbNAND8,589,934,5922004Samsung60nm??
16GbNAND17,179,869,1842005Samsung50nm??
32GbNAND34,359,738,3682006Samsung40nm
THGAM128GbStacked NAND128,000,000,000April 2007Toshiba56nm252mm2507,900,000
THGBM256GbStacked NAND256,000,000,0002008Toshiba43nm353mm2725,200,000
THGBM21 TbStacked 4-bit NAND256,000,000,0002010Toshiba32nm374mm2684,500,000
KLMCG8GE4A512GbStacked 2-bit NAND256,000,000,0002011Samsung?192mm21,333,000,000
KLUFG8R1EM4TbStacked 3-bit V-NAND1,365,333,333,5042017Samsung?150mm29,102,000,000
eUFS (1TB)8TbStacked 4-bit V-NAND2,048,000,000,0002019Samsung?150mm213,650,000,000
?1 Tb232L TLC NAND die333,333,333,3332022Micron?68.5mm2 (memory array)4,870,000,000 (14.6 Gbit/mm2)
?16 Tb232L package5,333,333,333,3332022Micron?68.5mm2 (memory array)77,900,000,000 (16×14.6 Gbit/mm2)
Read-only memory (ROM)
Chip nameCapacity (bits)ROM typeTransistor countDate of introductionManufacturer(s)ProcessAreaRef
??PROM?1956Arma—N/a?
1 KbROM (MOS)1,0241965General Microelectronics??
33011KbROM (bipolar)1,0241969Intel—N/a?
17022KbEPROM (MOS)2,0481971Intel?15mm2
?4KbROM (MOS)4,0961974AMD, General Instrument??
27088KbEPROM (MOS)8,1921975Intel??
?2KbEEPROM (MOS)2,0481976Toshiba??
μCOM-43 ROM16KbPROM (PMOS)16,0001977NEC??
271616KbEPROM (TTL)16,3841977Intel—N/a?
EA8316F16KbROM (NMOS)16,3841978Electronic Arrays?436mm2
273232KbEPROM32,7681978Intel??
236464KbROM65,5361978Intel??
276464KbEPROM65,5361981Intel3,500 nm?
27128128KbEPROM131,0721982Intel?
27256256KbEPROM (HMOS)262,1441983Intel??
?256KbEPROM (CMOS)262,1441983Fujitsu??
512KbEPROM (NMOS)524,2881984AMD1,700nm?
27512512KbEPROM (HMOS)524,2881984Intel??
?1 MbEPROM (CMOS)1,048,5761984NEC1,200nm?
4MbEPROM (CMOS)4,194,3041987Toshiba800nm
16MbEPROM (CMOS)16,777,2161990NEC600nm
MROM16,777,2161995AKM, Hitachi??

Transistor computers

Part of an IBM 7070 card cage populated with Standard Modular System cards

Before transistors were invented, relays were used in commercial tabulating machines and experimental early computers. The world's first working programmable, fully automatic digital computer, the 1941 Z3 22-bit word length computer, had 2,600 relays, and operated at a clock frequency of about 4–5Hz. The 1940 Complex Number Computer had fewer than 500 relays, but it was not fully programmable. The earliest practical computers used vacuum tubes and solid-state diode logic. ENIAC had 18,000 vacuum tubes, 7,200 crystal diodes, and 1,500 relays, with many of the vacuum tubes containing two triode elements.

The second generation of computers were transistor computers that featured boards filled with discrete transistors, solid-state diodes and magnetic memory cores. The experimental 1953 48-bit Transistor Computer, developed at the University of Manchester, is widely believed to be the first transistor computer to come into operation anywhere in the world (the prototype had 92 point-contact transistors and 550 diodes). A later version the 1955 machine had a total of 250 junction transistors and 1,300 point-contact diodes. The Computer also used a small number of tubes in its clock generator, so it was not the first fully transistorized. The ETL Mark III, developed at the Electrotechnical Laboratory in 1956, may have been the first transistor-based electronic computer using the stored program method. It had about "130 point-contact transistors and about 1,800 germanium diodes were used for logic elements, and these were housed on 300 plug-in packages which could be slipped in and out." The 1958 decimal architecture IBM 7070 was the first transistor computer to be fully programmable. It had about 30,000 alloy-junction germanium transistors and 22,000 germanium diodes, on approximately 14,000 Standard Modular System (SMS) cards. The 1959 MOBIDIC, short for "MOBIle DIgital Computer", at 12,000 pounds (6.0 short tons) mounted in the trailer of a semi-trailer truck, was a transistorized computer for battlefield data.

The third generation of computers used integrated circuits (ICs). The 1962 15-bit Apollo Guidance Computer used "about 4,000 "Type-G" (3-input NOR gate) circuits" for about 12,000 transistors plus 32,000 resistors. The IBM System/360, introduced 1964, used discrete transistors in hybrid circuit packs. The 1965 12-bit PDP-8 CPU had 1409 discrete transistors and over 10,000 diodes, on many cards. Later versions, starting with the 1968 PDP-8/I, used integrated circuits. The PDP-8 was later reimplemented as a microprocessor as the Intersil 6100, see below.

The next generation of computers were the microcomputers, starting with the 1971 Intel 4004, which used MOS transistors. These were used in home computers or personal computers (PCs).

This list includes early transistorized computers (second generation) and IC-based computers (third generation) from the 1950s and 1960s.

ComputerTransistor countYearManufacturerNotesRef
Transistor Computer921953University of ManchesterPoint-contact transistors, 550 diodes. Lacked stored program capability.
TRADIC7001954Bell LabsPoint-contact transistors
Transistor Computer (full size)2501955University of ManchesterDiscrete point-contact transistors, 1,300 diodes
IBM 6083,0001955IBMGermanium transistors
ETL Mark III1301956Electrotechnical LaboratoryPoint-contact transistors, 1,800 diodes, stored program capability
Metrovick 9502001956Metropolitan-VickersDiscrete junction transistors
NEC NEAC-22016001958NECGermanium transistors
Hitachi MARS-11,0001958Hitachi
IBM 707030,0001958IBMAlloy-junction germanium transistors, 22,000 diodes
Matsushita MADIC-I4001959MatsushitaBipolar transistors
NEC NEAC-22032,5791959NEC
Toshiba TOSBAC-21005,0001959Toshiba
IBM 709050,0001959IBMDiscrete germanium transistors
PDP-12,7001959Digital Equipment CorporationDiscrete transistors
Olivetti Elea 9003?1959Olivetti300,000 (?) discrete transistors and diodes
Mitsubishi MELCOM 11013,5001960MitsubishiGermanium transistors
M18 FADAC1,6001960AutoneticsDiscrete transistors
CPU of IBM 7030 Stretch169,1001961IBMWorld's fastest computer from 1961 to 1964
D-17B1,5211962AutoneticsDiscrete transistors
NEC NEAC-L216,0001964NECGe transistors
CDC 6600 (entire computer)400,0001964Control Data CorporationWorld's fastest computer from 1964 to 1969
IBM System/360?1964IBMHybrid circuits
PDP-8 "Straight-8"1,4091965Digital Equipment Corporationdiscrete transistors, 10,000 diodes
PDP-8/S1,0011966Digital Equipment Corporationdiscrete transistors, diodes
PDP-8/I1,409[citation needed]1968Digital Equipment Corporation74 series TTL circuits
Apollo Guidance Computer Block I12,3001966Raytheon / MIT Instrumentation Laboratory4,100 ICs, each containing a 3-transistor, 3-input NOR gate. (Block II had 2,800 dual 3-input NOR gates ICs.)

Logic functions

Transistor count for generic logic functions is based on static CMOS implementation.

FunctionTransistor countRef.
NOT2
Buffer4
NAND 2-input4
NOR 2-input4
AND 2-input6
OR 2-input6
NAND 3-input6
NOR 3-input6
XOR 2-input6
XNOR 2-input8
MUX 2-input with TG6
MUX 4-input with TG18
NOT MUX 2-input8
MUX 4-input24
1-bit full adder24
1-bit adder–subtractor48
AND-OR-INVERT6
Latch, D gated8
Flip-flop, edge triggered dynamic D with reset12
8-bit multiplier3,000
16-bit multiplier9,000
32-bit multiplier21,000[citation needed]
small-scale integration2–100
medium-scale integration100–500
large-scale integration500–20,000
very-large-scale integration20,000–1,000,000
ultra-large scale integration>1,000,000

Parallel systems

Historically, each processing element in earlier parallel systems—like all CPUs of that time—was a serial computer built out of multiple chips. As transistor counts per chip increases, each processing element could be built out of fewer chips, and then later each multi-core processor chip could contain more processing elements.

Goodyear MPP: (1983?) 8 pixel processors per chip, 3,000 to 8,000 transistors per chip.

Brunel University Scape (single-chip array-processing element): (1983) 256 pixel processors per chip, 120,000 to 140,000 transistors per chip.

Cell Broadband Engine: (2006) with 9 cores per chip, had 234 million transistors per chip.

Other devices

Device typeDevice nameTransistor countDate of introductionDesigner(s)Manufacturer(s)MOS processAreaTransistor density, tr./mm2Ref
Deep learning engine / IPUColossus GC223,600,000,0002018GraphcoreTSMC16nm~800mm229,500,000[bettersourceneeded]
Deep learning engine / IPUWafer Scale Engine1,200,000,000,0002019CerebrasTSMC16nm46,225mm225,960,000
Deep learning engine / IPUWafer Scale Engine 22,600,000,000,0002020CerebrasTSMC7nm46,225mm256,250,000
Network switchNVLink4 NVSwitch25,100,000,0002022NvidiaTSMCN4 (4nm)294mm285,370,000

Transistor density

The transistor density is the number of transistors that are fabricated per unit area, typically measured in terms of the number of transistors per square millimeter (mm2). The transistor density usually correlates with the gate length of a semiconductor node (also known as a semiconductor manufacturing process), typically measured in nanometers (nm). As of 2019[update], the semiconductor node with the highest transistor density is TSMC's 5 nanometer node, with 171.3million transistors per square millimeter (note this corresponds to a transistor-transistor spacing of 76.4nm, far greater than the relative meaningless "5nm")

MOSFET nodes

Semiconductor nodes
Node nameTransistor density (transistors/mm2)Production yearProcessMOSFETManufacturer(s)Ref
??196020,000 nmPMOSBell Labs
??196020,000nmNMOS
??1963?CMOSFairchild
??1964?PMOSGeneral Microelectronics
??196820,000nmCMOSRCA
??196912,000nmPMOSIntel
??197010,000nmCMOSRCA
?30019708,000nmPMOSIntel
??197110,000nmPMOSIntel
?4801971?PMOSGeneral Instrument
??1973?NMOSTexas Instruments
?2201973?NMOSMostek
??19737,500nmNMOSNEC
??19736,000nmPMOSToshiba
??19765,000nmNMOSHitachi, Intel
??19765,000nmCMOSRCA
??19764,000nmNMOSZilog
??19763,000nmNMOSIntel
?1,8501977?NMOSNTT
??19783,000nmCMOSHitachi
??19782,500nmNMOSTexas Instruments
??19782,000nmNMOSNEC, NTT
?2,6001979?VMOSSiemens
?7,28019791,000nmNMOSNTT
?7,62019801,000nmNMOSNTT
??19832,000nmCMOSToshiba
??19831,500nmCMOSIntel
??19831,200nmCMOSIntel
??1984800 nmCMOSNTT
??1987700nmCMOSFujitsu
??1989600 nmCMOSMitsubishi, NEC, Toshiba
??1989500 nmCMOSHitachi, Mitsubishi, NEC, Toshiba
??1991400nmCMOSMatsushita, Mitsubishi, Fujitsu, Toshiba
??1993350 nmCMOSSony
??1993250 nmCMOSHitachi, NEC
3LM32,0001994350nmCMOSNEC
??1995160nmCMOSHitachi
??1996150nmCMOSMitsubishi
TSMC 180nm?1998180 nmCMOSTSMC
CS80?1999180nmCMOSFujitsu
??1999180 nmCMOSIntel, Sony, Toshiba
CS85?1999170nmCMOSFujitsu
Samsung 140nm?1999140nmCMOSSamsung
??2001130 nmCMOSFujitsu, Intel
Samsung 100nm?2001100nmCMOSSamsung
??200290 nmCMOSSony, Toshiba, Samsung
CS100?200390nmCMOSFujitsu
Intel 90nm1,450,000200490nmCMOSIntel
Samsung 80nm?200480nmCMOSSamsung
??200465 nmCMOSFujitsu, Toshiba
Samsung 60nm?200460nmCMOSSamsung
TSMC 45nm?200445 nmCMOSTSMC
Elpida 90nm?200590nmCMOSElpida Memory
CS200?200565nmCMOSFujitsu
Samsung 50nm?200550nmCMOSSamsung
Intel 65nm2,080,000200665nmCMOSIntel
Samsung 40nm?200640 nmCMOSSamsung
Toshiba 56nm?200756nmCMOSToshiba
Matsushita 45nm?200745nmCMOSMatsushita
Intel 45nm3,300,000200845nmCMOSIntel
Toshiba 43nm?200843nmCMOSToshiba
TSMC 40nm?200840nmCMOSTSMC
Toshiba 32nm?200932 nmCMOSToshiba
Intel 32nm7,500,000201032nmCMOSIntel
??201020 nmCMOSHynix, Samsung
Intel 22nm15,300,000201222 nmCMOSIntel
IMFT 20nm?201220nmCMOSIMFT
Toshiba 19nm?201219nmCMOSToshiba
Hynix 16nm?201316 nmFinFETSK Hynix
TSMC 16nm28,880,000201316nmFinFETTSMC
Samsung 10nm51,820,000201310 nmFinFETSamsung
Intel 14nm37,500,000201414 nmFinFETIntel
14LP32,940,000201514nmFinFETSamsung
TSMC 10nm52,510,000201610nmFinFETTSMC
12LP36,710,000201712 nmFinFETGlobalFoundries, Samsung
N7FF96,500,000 101,850,00020177 nmFinFETTSMC
8LPP61,180,00020188nmFinFETSamsung
7LPE95,300,00020187nmFinFETSamsung
Intel 10nm100,760,000 106,100,000201810nmFinFETIntel
5LPE126,530,000 133,560,000 134,900,00020185 nmFinFETSamsung
N7FF+113,900,00020197nmFinFETTSMC
CLN5FF171,300,000 185,460,00020195nmFinFETTSMC
Intel 7100,760,000 106,100,00020217nmFinFETIntel
4LPE145,700,00020214nmFinFETSamsung
N4196,600,00020214nmFinFETTSMC
N4P196,600,00020224nmFinFETTSMC
3GAE202,850,00020223nmMBCFETSamsung
N3314,730,00020223nmFinFETTSMC
N4X?20234nmFinFETTSMC
N3E?20233nmFinFETTSMC
3GAP?20233nmMBCFETSamsung
Intel 4160,000,00020234nmFinFETIntel
Intel 3?20233nmFinFETIntel
Intel 20A?20242nmRibbonFETIntel
Intel 18A238,000,0002025sub-2nmRibbonFETIntel
2GAP?20252nmMBCFETSamsung
N2?20252nmGAAFETTSMC
Samsung 1.4nm?20271.4nm?Samsung

Gate count

In certain applications, the term gate count is preferred over the term transistor count. It refers to the number of logic gates built with transistors and other electronic devices needed to implement a design.

See also

Notes

External links